首页|Highly phosphorus-doped polycrystalline diamond growth and properties
Highly phosphorus-doped polycrystalline diamond growth and properties
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NSTL
Elsevier
? 2022 Elsevier B.V.In this work, phosphorus-doped polycrystalline diamond layers were grown using a new gas control process to increase the incorporation of phosphorus in diamond. Topographical characteristics and crystalline quality of the phosphorus-doped polycrystalline diamond layers grown on Si substrates were analyzed using Scanning Electron Microscopy (SEM) and Raman spectroscopy. The phosphorus concentration was determined using Glow-Discharge Optical Emission Spectroscopy (GDOES). Polycrystalline diamond layers have a good crystalline quality with a sp3/sp2 carbon ration over 75%. The growth rate reaches up to 440 nm?h?1, and the phosphorus concentration is well above 1020 cm?3. Novelty statement: This work reports on a new method for the production of phosphorus-doped polycrystalline diamond layers based on the pulsed injection of methane during the growth by microwave plasma enhanced chemical vapor deposition.
Diamond growthMicrowave plasma enhanced chemical vapor depositionPhosphorus dopingPolycrystalline diamondPulsed gas
Weiss Z.、Klimsa L.、Kopecek J.、Mortet V.、Gedeonova Z.、Hubik P.、Lambert N.
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FZU – Institute of Physics of the Czech Academy of Sciences
NSTL
Elsevier
