首页|Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique
Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique
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NSTL
Elsevier
? 2022The effect of H+ implantation and annealing of diamond (100) monocrystalline substrates has been studied by ToF-SIMS, cathodoluminescence, transmission spectroscopy and TEM. Blistering conditions suitable for the Smart Cut? technology have been identified in monocrystalline diamond, using two sets of hydrogen implantation and annealing. A first hydrogen implantation followed by a first annealing leads to amorphization of a buried layer without hydrogen exodiffusion. Blisters and exfoliations appear at the surface of the diamond samples, after a second hydrogen implantation inside the pre-amorphized diamond layer and a final annealing, as evidenced by TEM and optical microscopy. Demonstration of hydrogen-induced blistering is a major step to adapt the Smart Cut? process on diamond material. This process is compatible with wafer bonding before the second annealing and therefore open the way for thin diamond layer transfer on a bonded receiver wafer, still not achieved to date.
NSTL
Elsevier
