Formation process and lattice parameter of InAs/GaAs quantum dots

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外文摘要：The formation of self-assembled InAs quantum dots (QDs) on GaAs substrates has attracted much interest as a growth technique to fabricate promising nanoscale devices such as QD lasers [1] and QD infrared photodetectors [2,3] without an additional lithography process because QDs have discrete atom-like energy levels with good optical properties [4]. Self-assembled QDs in lattice-mismatched system,s such as InAs/GaAs and SiGe/Si, can be achieved by using the Stranski-Krastanov (SK) growth mode [5]. In the SK growth mode, the mismatched layer grows on the substrate two-dimensionally at first, then, above a critical thickness, strain-induced and dislocation-free QDs are formed on a residual two-dimensional wetting layer. An appropriate regulation of the respective growth conditions may provide the possibility for controlling precisely the size and the density of the QDs.

作者：

M. D. Kim、H. S. Lee、J. Y. Lee、T. W. Kim、K. H. Yoo、G. -H. Kim

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作者单位：

Department of Physics, Chungnam National University, Daejeon 305-764, Korea

Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Korea

Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea

Department of Physics, Kyung Hee University, Seoul 130-701, Korea

Department of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea

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出版年：

2003

Journal of Materials Science Letters

SCI

ISSN：0261-8028

年,卷(期)：2003.22(24)