Abstract
We performed first-principles calculations to study the H-3 diffusion in the zirconium hydrides with or without Sn impurity. Our results show that the formation of (ZrHx)-H-3 becomes preferable as the H-3 concentration increases. Based on the most stable configurations of (ZrHx)-H-3 (x = 0.5, 1.0, 1.5, 2.0), we studied the interstitial H-3 diffusion with or without Sn impurity. The results show that the interstitial H-3 diffusion becomes less probable in the hydrides with a higher H-3 concentration. When introducing a substitutional Sn impurity, the diffusion barriers increase. Therefore, the substitutional Sn in the diffusion pathway hampers the H-3 diffusion in Zr hydrides.