首页|Ultrafast probing of indium doping on SnTe topological insulator
Ultrafast probing of indium doping on SnTe topological insulator
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NSTL
Elsevier
ABSTR A C T In this article, we report the optical probing of SnTe (275 nm and 33 nm) and Indium-doped SnTe films (50 nm) which are deposited using thermal evaporation. XRD (X-ray diffraction) and Raman spectroscopy are used to characterize the films. Additionally, the optical characteristics of the material are examined using reflectance and PL (photoluminescence) spectroscopy. Simultaneously, the dynamics of charge carriers are studied using TRUS (Transient reflectance ultrafast spectroscopy). The TRUS probes the thin films in the visible to near-infrared range (400-1600 nm) with a probe latency of a few femtoseconds to 6 ns. The study demonstrates the pres-ence of a resonant state in SnTe, which becomes more prominent and metastable with indium doping.
NSTL
Elsevier
