首页|Facile fabrication metal Cu-decorated g-C3N4 photocatalyst with Schottky barrier for efficient pollutant elimination
Facile fabrication metal Cu-decorated g-C3N4 photocatalyst with Schottky barrier for efficient pollutant elimination
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NSTL
Elsevier
? 2022A Schottky barrier can enhance the separation of electron-hole pairs and the photocatalytic performance. Herein, CuX/g-C3N4 (CuX/CN) photocatalysts with the Schottky barrier were successfully synthesized by a simple electrostatic adsorption method. The obtained Cu3/CN exhibited higher photocatalytic degradation activity (96.77%) and TOC removal rate (86.97%) toward methylene blue (MB) than pure g-C3N4 (29.04%, 36.48%, respectively). In addition, the Cu3/CN performed well in 4 cycles. The enhanced photocatalytic activity was ascribed to the Schottky barrier at the interface of Cu and g-C3N4. Therefore, the semiconductor g-C3N4 became an electron donor for metal Cu under visible light excitation. The separation efficiency of photogenerated carriers was significantly improved via the Schottky barrier, confirmed by photoluminescence spectra, transient photocurrent response, and electrochemical impedance spectra. In addition, the introduction of Cu broadened the absorption range of visible light. The active radical capture tests displayed that superoxide radicals (?O2?) and holes (h+) were dominant radicals during photocatalytic degradation. This work showed that the Schottky barrier provided a new path for the effective transfer of electrons.
Liu K.、Wang X.、Li C.、Gao M.、Cao N.、Zhao X.、Li W.、Ding X.、Li Z.、Du X.、Feng J.、Ren Y.、Wei T.、Zhang M.
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Key Laboratory of Superlight Materials & Surface Technology of Ministry of Education Harbin Engineering University
School of Materials Science and Engineering China University of Petroleum (East China)
Key Laboratory for Photonic and Electronic Bandgap Materials Ministry of Education School of Physics and Electronic Engineering Harbin Normal University
NSTL
Elsevier
