首页|Annealing of the Raman defect peaks in He-implanted UO2
Annealing of the Raman defect peaks in He-implanted UO2
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NSTL
Elsevier
The exploitation of the data acquired by Raman spectroscopy on UO2 related materials requires the understanding of the so-called defect peaks. To do so, we measured the Raman spectrum of a He-implanted UO2 sample as a function of temperature. Two annealing steps are evidenced that correspond to known annealing temperatures reported in literature. These results are discussed in order to identify what defect could be at the origin of the Raman defect peaks. (C) 2021 Elsevier B.V. All rights reserved.
NSTL
Elsevier
