Surface & Coatings Technology2022,Vol.43110.DOI:10.1016/j.surfcoat.2021.128000

Effect of TiAlCrNb buffer layer on thermal cycling behavior of YSZ/TiAlCrY coatings on gamma-TiAl alloys

Hong, Du Han, Dijuan Zhong, Xin Niu, Yaran Zheng, Xuebin Pan, Yangyang Liang, Bo
Surface & Coatings Technology2022,Vol.43110.DOI:10.1016/j.surfcoat.2021.128000

Effect of TiAlCrNb buffer layer on thermal cycling behavior of YSZ/TiAlCrY coatings on gamma-TiAl alloys

Hong, Du 1Han, Dijuan 1Zhong, Xin 1Niu, Yaran 1Zheng, Xuebin 1Pan, Yangyang 2Liang, Bo2
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作者信息

  • 1. Chinese Acad Sci
  • 2. Yanshan Univ
  • 折叠

Abstract

TiAlCrY has been used as a bonding layer for the thermal barrier coating (TBC) system on TiAl alloys, due to its excellent high temperature oxidation resistance. However, it was found that vertical cracks formed in the TiAlCrY layer during the thermal cycling tests, which would fasten the failure of TBC system. In this work, a TiAlCrNb buffer layer was introduced between TiAlCrY layer and the substrate to alleviate the nucleation and propagation of cracks in the TiAlCrY layer from the perspective of alleviating the stress concentration, aiming to improve the thermal cycling lifetime of the YSZ/TiAlCrY system. The results show that the thermal cycling lifetime of the newly designed YSZ/TiAlCrY/TiAlCrNb system was over 245 cycles by means of water-quenching, which was almost twice of the system without the buffer layer and 3-4 times of the traditional YSZ/MCrAlY system on superalloys. The influence of the TiAlCrNb buffer layer was analyzed based on the combined analysis of microstructure, residual stresses and mechanical properties. This work implies that a proper buffer layer could effectively improve the thermal cycling lifetime of TBCs on TiAl alloys.

Key words

TBCs/Buffer layer/Thermal cycling lifetimes/Stress concentration/TiAl alloys/BARRIER COATINGS/OXIDATION BEHAVIOR/STRESS MEASUREMENT/RESIDUAL-STRESS/SHOCK BEHAVIOR/YSZ/MICROSTRUCTURE/PHASE/TBCS/APS

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出版年

2022
Surface & Coatings Technology

Surface & Coatings Technology

ISTP
ISSN:0257-8972
被引量4
参考文献量33
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