首页|Anisotropic magnetoresistance in room temperature ferromagnetic single crystal CrTe flake

Anisotropic magnetoresistance in room temperature ferromagnetic single crystal CrTe flake

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  • NSTL
  • Elsevier
Chromium tellurides have triggered tremendous investigations in physics and materials science, where their unique properties offer excellent opportunities for spintronic applications. Here, we report anisotropic magnetoresistance (AMR) of ferromagnetic CrTe single crystal flake grown by chemical vapor deposition. An individual hexagonal flake exhibits an easy magnetization axis along its normal direction, and cooling from room temperature to low temperature, its electrical resistance measured with the magnetization parallel to current geometry is larger than that for the perpendicular to the current geometry, indicating the presence of an AMR behavior. The AMR ratio has been found to increase with decreasing temperature and is 5.2% at 5 K, comparable with general magnetic transition metal and alloy. This suggests CrTe single crystal flake to be a promising magnetic material for spintronics applications.

Anisotropic magnetoresistanceChemical vapor depositionChromium telluridesPerpendicular magnetic anisotropyRoom temperature ferromagnet

Xu Y.、Yang Y.、Huang Z.、Lin W.、Ni Z.、Chen Q.、Zhai Y.、Liu R.、Cao L.、Du J.、Sun S.、Liang J.、Shen W.、Wu H.、Tian M.

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Laboratory of Spintronics and Nanodevice Department of Electronic Engineering York University

School of Physics and Quantum Information Research Center Southeast University

National Laboratory of Solid State Microstructures Nanjing University

2022

10.1016/j.jallcom.2021.161818

Journal of Alloys and Compounds

Journal of Alloys and Compounds

EISCI
ISSN：0925-8388
年,卷(期)：2022.890
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