首页|High saturation structural color based on lithography-free planar thin film with doped indium-gallium-zinc-oxide semiconductor
High saturation structural color based on lithography-free planar thin film with doped indium-gallium-zinc-oxide semiconductor
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NSTL
Elsevier
We propose a compact multilayer thin film color pixel and a method for efficient transmissive color in the visible regime. When the angle of incidence (AOI) varies between 0 and 60, there is almost no change of the transmitted color. Meanwhile, additional dielectric layers at the top and bottom of the hybrid structure work as anti-reflection (AR) layers, which greatly improve the transmission efficiency. The performance can be switched by adjusting the thickness of the film, as well as controlling the charge carrier concentration in a doped indium-gallium-zinc-oxide (IGZO). Besides their simple, large scale compatible, and electron beam lithography (EBL) free fabrication route, the designed structure provides relatively high efficiency, high color purity, and low crosstalk, which may provide some new insights for structural color applications.
Color filterMultilayerIndium-gallium-zinc-oxideThin filmsANGLEGENERATIONPURITYFILTER
NSTL
Elsevier
