Journal of Alloys and Compounds2022,Vol.9049.DOI:10.1016/j.jallcom.2022.164078

Space charge formation in the high purity semi-insulating bulk 4H–silicon carbide

Belas E. Betusiak M. Grill R. Praus P. Brynza M. Pipek J. Moravec P.
Journal of Alloys and Compounds2022,Vol.9049.DOI:10.1016/j.jallcom.2022.164078

Space charge formation in the high purity semi-insulating bulk 4H–silicon carbide

Belas E. 1Betusiak M. 1Grill R. 1Praus P. 1Brynza M. 1Pipek J. 1Moravec P.1
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作者信息

  • 1. Charles University Faculty of Mathematics and Physics Institute of Physics
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Abstract

? 2022 Elsevier B.V.We investigated the carrier transport and space charge formation in the high purity semi-insulating 4H-SiC bulk single crystal. Using the Laser–induced Transient Current Technique we observed anomalous short current waveform oscillations that are caused by very short carrier lifetime ≤ 1 ns. We conclude from a detailed inspection of current waveform shape completed by the analysis of collected charge that the electron mobility decreases in an increasing electric field. The saturation value of electron drift velocity 8.7 × 106 cm2s-1 was evaluated. The Hall effect measurement revealed the n-type electrical conductivity and dominant donor energy of ED = 0.85 eV. We also observed the blocking character of prepared Au contacts, which induce the electron depletion and positive space charge formation in biased sample. The continuous increase of the space charge in a wide time interval of 10-1 s – 104 s, attested to testified on a presence of a dispersed impurity band localized below the Fermi energy. Based on these findings, we proposed a theoretical model describing the observed phenomena very well.

Key words

4H-SiC/Charge transport/Space charge formation/ToF

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出版年

2022
Journal of Alloys and Compounds

Journal of Alloys and Compounds

EISCI
ISSN:0925-8388
参考文献量34
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