首页|Complementary evaluation of potential barriers in semiconducting barium titanate by electrostatic force microscopy and capacitance-voltage measurements

Complementary evaluation of potential barriers in semiconducting barium titanate by electrostatic force microscopy and capacitance-voltage measurements

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  • NSTL
  • Elsevier
Electrostatic force microscopy (EFM) was used to directly image the impact of SiO2 content variations on the grain boundary potential barriers in semiconducting BaTiO3-based ceramics. The grain boundary barriers were shown to be significantly thinner and more pronounced as the amount of SiO2 was increased from 0 to 5 mol%. The EFM results were confirmed by capacitance-voltage (C-V) measurements which proofs the accuracy of both methods and highlights their importance for gaining a better understanding of the interrelations between material composition and electrical properties.

Electrostatic forcce microscopyGrain boundary potential barriersPTCR ceramicsBaTiO3POSITIVE-TEMPERATURE-COEFFICIENTGRAIN-BOUNDARYELECTRICAL-CONDUCTIVITYSTRONTIUM-TITANATEDEFECT CHEMISTRYSIO2 ADDITIONSBATIO3RESISTIVITYCERAMICSMICROSTRUCTURES

Prohinig, Jennifer M.、Huetner, Johanna、Reichmann, Klaus、Bigl, Stephan

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TDK Elect GmbH & Co

GETec Microscopy GmbH

Technol Mat Graz Univ Technol

2022

10.1016/j.scriptamat.2022.114646

Scripta materialia

Scripta materialia

EISCI
ISSN：1359-6462
年,卷(期)：2022.214
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