首页|Metrological evaluation of the influence of the detection gate width on a single photon detector through optical attenuation
Metrological evaluation of the influence of the detection gate width on a single photon detector through optical attenuation
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NSTL
Elsevier
In this paper, we propose a method for evaluating the impact of the detection gate width of an InGaAs/InP singlephoton avalanche diode detector by analyzing the probability of detecting 0 or 1 photon as a function of the optical attenuation and the consequent variation of the average number of photons per gate measured by the detector ((mu) over bar). With a detection efficiency eta of 15 % and a dead time of 1 mu s, considering gate widths of 4 ns, 8 ns, 12 ns, 16 ns, and 20 ns, an adequate optical power range for calibrating a single-photon avalanche diode detector was obtained in the range of 0.15 nW to 10 nW, with linear behavior and low measurement uncertainty of calibration curve fittings for 4 ns and 8 ns gate widths, respectively, associated with products (mu) over bar eta of 0.32 x 10(-4) to 190 x 10(-4) and 2.90 x 10(-4) to 140 x 10(-4).
NSTL
Elsevier
