Abstract
The promising quaternary chalcogenide Cu_2Fe_(1-x)In_xSnS_4 (where x = 0 -0.25 -0.50 -0.75 and 1) thin films were grown using spray pyrolysis technique. The behaviors of indium inclusion on chemical composition, morphological, structural, optical and electrical properties have been investigated using respectively: Energy dispersive X-ray spectrometry (EDX), scanning electron microscopy (SEM), X-ray diffraction (XRD), Maud software, Raman spectroscopy, spectrophotometer and Hall Effect. XRD and Maud software revealed a formation of stannite Cu_2InSnS_4 (x = 1) named CITS from stannite Cu_2FeSnS_4 (x = 0) called CFTS with same preferred orientation (112) plan. Identification of chalcogenide CITS was supported from chemical composition ratio of Cu:In:Sn:S, which are near to theoretical values 2:1:1:4. Electrical resistivity was increased slightly from 5.82 10~(-3) (for CFTS) to 5.94 10~(-3) D.cm (for CITS). This trend may be due to the decrement of crystallite sizes. The energy band gap of CITS was equal to 1.4 eV. These optical and electrical behaviors favorite Cu_2InSnS_4 thin film to be implicate as an absorber material in solar cell applications. Furthermore, this work highlights the surface wettability of Cu_2Fe_(1-x)In_xSnS_4 thin films showing a conversion from hy-drophilic CFTS surface into hydrophobic CITS surface. In addition, photocatalytic activity of Cu_2InSnS_4/SnO_2:F (CITS-FTO) heterojunction has been investigated under Xenon light irradiation using methylene blue (MB) and methyl orange (MO) as representatives pollutant dyes. Moreover, MB dye was continuously degraded during four cycles, meaning that CITS-FTO photocatalyst has relatively good stability in MB degradation. Therefore, this work provides an opportunity for a new successful removal candidate CITS-FTO of water contaminants for photocatalytic applications and new absorber CITS material for photovoltaic applications.
NSTL
Elsevier