Abstract
Dye-sensitized solar cells (DSSCs) with TiO_2 as electron transport layer (ETL) demonstrate great potential in the field of photoelectric devices featuring low cost and high power conversion efficiency (PCE). However, the photovoltaic performance of DSSCs based on TiO_2 ETL is still confined by the undesirable charge recombination occurring in TiO_2 layer (intrinsic defects), dye layer (self-quenching) and at the interface between TiO_2 and electrolyte (back electron transfer). Herein, we firstly adopted a trisiloxane molecule (denoted as TSi) to holistically reduce the abovementioned charge recombination of DSSCs via passivating surface defects of TiO_2, fine-tuning dye molecules arrangement and forming interfacial energy barrier. As a result, the Z907-based DSSCs with TiO_2/TSi ETL deliver a high PCE of 9.43%, increasing over 16% than that of DSSCs without TSi treatment. Meanwhile, the DSSCs based on TiO_2/TSi ETL present stronger endurance to high humidity and better long-term stability versus that of the DSSCs without TSi treatment. Our work provides a simple yet effective strategy to holistically reduce charge recombination of devices for improving the photovoltaic performance and stability of DSSCs.