Journal of Materials Chemistry2011,Vol.21Issue(38) :8.DOI:10.1039/c1jm12966j

Synthesis and structural, electronic, optical and FET properties of thiophene-pyrrole mixed hexamers end-capped with phenyl and pentafluorophenyl groups

Tohru Nishinaga Toshihiko Miyata Masaki Tateno
Journal of Materials Chemistry2011,Vol.21Issue(38) :8.DOI:10.1039/c1jm12966j

Synthesis and structural, electronic, optical and FET properties of thiophene-pyrrole mixed hexamers end-capped with phenyl and pentafluorophenyl groups

Tohru Nishinaga 1Toshihiko Miyata 1Masaki Tateno1
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作者信息

  • 1. Department of Chemistry, Graduate School of Science and Engineering, Tokyo Metropolitan University, Hachioji, Tokyo, 192-0397, Japan.
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Abstract

α-Linked thiophene-pyrrole mixed hexamers 3a-5a end-capped with two phenyl, two pentafluorophenyl and both phenyl and pentafluorophenyl units were newly synthesized, and their structural, electronic, optical and FET properties were investigated. Structural analyses by means of X-ray crystallography and theoretical calculations showed that the π-system of the oligomer chains is twisted due to the steric repulsion between the hexyl group of the pyrrole unit and the adjacent thiophene moiety. From comparison of the absorption maxima and redox potentials, end-capping with phenyl and pentafluorophenyl units did not affect the HOMO-LUMO gap for the thiophene-pyrrole hexamer, and the multiple fluorine substituents slightly decreased both HOMO and LUMO levels by the inductive effects of the electronegative fluorine atoms. Although the diphenyl derivative 3a with a herringbone-type packing structure did not serve as an active layer for FET devices, a unique crystal-to-crystal phase transition with a color change from yellow to red was observed upon heating. In contrast to the herringbone-type packing structure of 3a, the unsymmetrical phenyl-pentafluorophenyl derivative 5a showed a partially π-stacked structure, most likely due to dipole-dipole interactions. The π-stacked structure of 5a caused a good hole mobility of 4.1 x 10~(-2) cm~2 V~(-1) s~(-1) in a single crystal FET I device.

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出版年

2011
Journal of Materials Chemistry

Journal of Materials Chemistry

CCR
ISSN:0959-9428
被引量16
参考文献量58
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