首页|High-sensitive, self-powered deep UV photodetector based on p-CuSCN/n-Ga2O3 thin film heterojunction

High-sensitive, self-powered deep UV photodetector based on p-CuSCN/n-Ga2O3 thin film heterojunction

扫码查看
原文链接
  • NSTL
  • Elsevier
Herein, a CuSCN/Ga2O3 heterojunction device was fabricated by spin-coating and metal-organic chemical vapor deposition (MOCVD) methods. Under the irradiation of 254 nm deep ultraviolet (DUV) light with an intensity of 1000 mu W/cm(2) , the device shown high sensitivity and favorable self-powered performances with photo-to-dark current ratio (PDCR) of 1.29 x 10(4) , photo responsivity (R) of 5.5 mA/W, rejection ratio (R-270nm/R-600nm) of 4.33 x 10(3) , and specific detectivity (D*) of 3.8 x 10(11) cm Hz(1/2)W(-1) (Jones) at -5 V. In addition, the device has a rise time of 0.45 s and 3.80 s, and a decay time of 0.26 s and 0.26 s. In general, the CuSCN/Ga2O3 heterojunction prepared in this work may well be a potential candidate for achieving a self-powered and high-performance DUV photodetector.

Ga2O3CuSCNHeterojunctionDUV detector

Sun, Bingyang、Sun, Weiming、Li, Shan、Ma, Guoliang、Jiang, Weiyu、Yan, Zuyong、Wang, Xia、An, Yuehua、Li, Peigang、Liu, Zeng、Tang, Weihua

展开 >

Beijing Univ Posts & Telecommun, Sch Sci, Lab Informat Funct Mat & Devices, Beijing 100876, Peoples R China

Shanxi Inst Technol, Dept Elect Engn & Automat, Yangquan 045000, Peoples R China

Guangdong Polytech Normal Univ, Sch Optoelect Engn, Guangzhou 510665, Peoples R China

Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210023, Peoples R China

展开 >

2022

10.1016/j.optcom.2021.127483

Optics Communications

Optics Communications

EISCI
ISSN：0030-4018
年,卷(期)：2022.504
  • 10
  • 40