首页|Sintering and Properties of Materials Synthesized on the Basis of Silicon, Boron, and Titanium Carbides by Electrospark Sintering
Sintering and Properties of Materials Synthesized on the Basis of Silicon, Boron, and Titanium Carbides by Electrospark Sintering
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NSTL
Pleiades Publishing Inc
Some specific features inherent in the electrospark sintering of materials based on silicon carbide with additives of boron and titanium carbides have been studied. The titanium carbide impurity activates the consolidation of silicon carbide and deactivates the consolidation of a mixture of boron and titanium carbides at the initial stage of sintering. The structure and physicomechanical properties of SiC-B4C-(0-15 wt %) TiC materials have been studied. Titanium carbide decelerates the growth of a silicon carbide grain by nearly 3 times to increase the cracking resistance of silicon carbide with the impurities of titanium and boron carbides by 40-45%. A material with a cracking resistance of 6.3 MPa/m(1/2) and an increased wear resistance has been synthesized.
NSTL
Pleiades Publishing Inc
