首页|Constructing a p-n heterojunction in 3D urchin-like CoNixSy/g-C3N4 composite microsphere for high performance asymmetric supercapacitors
Constructing a p-n heterojunction in 3D urchin-like CoNixSy/g-C3N4 composite microsphere for high performance asymmetric supercapacitors
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NSTL
Elsevier
A built-in electric field generated at the p-n heterojunction will enhance charge transfer at the interface, which brings a new strategy for improving electrochemical energy storage. Herein, we construct a novel p-n heterojunction in a three-dimensional (3D) urchin-like CoNixSy/g-C3N4 (3D–2D) junction microsphere based on a one-step solvothermal method. The forming built-in electric field at the heterointerface of p-type semiconductor (CoNixSy) and n-type semiconductor (g-C3N4) ensure its high-efficiency charge transfer. Besides, the porous 3D urchin-like microsphere could facilitate the diffusion of electrolytes and enhance the stability and volumetric energy density. Benefiting from the synergistic advantages of the p-n heterojunction and the 3D urchin-like structure, the CoNixSy/g-C3N4 electrode displayed an ultrahigh battery-type specific capacity (1029 C g?1) in a three-electrode system. Furthermore, an asymmetric supercapacitor formed by positive electrode of CoNixSy/g-C3N4 and negative electrode of activated carbon (AC) obtains a high energy density of 71.9 Wh kg?1 and a retention of 72.2% after 5000 cycles.
CoNi2S4g-C3N4NiSp-n heterojunctionSupercapacitors
Wang X.、Wang S.、Su D.、Xu S.、Cao S.、Xiao Y.
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School of Chemical Engineering Zhengzhou University
School of Materials Science and Engineering Zhengzhou University
Key Laboratory of Surface and Interface Science and Technology Zhengzhou University of Light Industry
NSTL
Elsevier
