首页|Metal-insulator transition in zirconium oxynitride films
Metal-insulator transition in zirconium oxynitride films
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NSTL
Elsevier
? 2021 Elsevier B.V.The zirconium oxynitride (ZrNxOy) thin films were deposited on the SiO2/Si substrate via direct current reactive magnetron sputtering, by tuning the reactive gas ratio r (the volume ratio between 1% O2+99% N2 and Ar) from 5.0% to 20.0%. The temperature dependence of resistivity reveals that the ZrNxOy films for r < 10.0% show the metallic transport behaviors, and the remarkable semiconductor transport features are presented while r > 15.0%. The metal-insulator transition is thus observed in the ZrNxOy films by tuning r. This result provides insight into the design and control of the electrical properties in ZrNxOy-based devices.
Electrical transportElectron-phonon interactionMetal-insulator transitionVariable-range hoppingZirconium oxynitride film
Wu J.、Li Z.、Peng L.、Zhang J.、Yi Y.
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Research Center of Laser Fusion China Academy of Engineering Physics
School of Materials Science and Engineering Southwest University of Science and Technology
NSTL
Elsevier
