Journal of Alloys and Compounds2022,Vol.9089.DOI:10.1016/j.jallcom.2022.164507

Study on surface modification of g-C3N4 photocatalyst

Liu Y. Liu T. Xia A. Ren H. Lv L. Dong S. Wang Y. Tan G. Dang M.
Journal of Alloys and Compounds2022,Vol.9089.DOI:10.1016/j.jallcom.2022.164507

Study on surface modification of g-C3N4 photocatalyst

Liu Y. 1Liu T. 1Xia A. 1Ren H. 2Lv L. 3Dong S. 4Wang Y. 1Tan G. 1Dang M.1
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作者信息

  • 1. School of Material Science and Engineering Shaanxi University of Science & Technology
  • 2. School of Arts and Science Shaanxi University of Science & Technology
  • 3. School of Electrical Engineering Xi'an Jiao Tong University
  • 4. China Academy of Space Technology
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Abstract

? 2022 Elsevier B.V.g-C3N4 powders with different morphology and surface charged property were obtained by acidification, oxidation and exfoliation treatment of melamine. Acid treatment converts -NH2 group in melamine into -NH3NO3 group, and further oxidation reduces the existing C[sbnd]N[sbnd]H bond, promotes the formation of C[sbnd]N[sbnd]C and N[sbnd](C)3 bond in g[sbnd]C3N4, and ensures the formation of layered g-C3N4 structure; acid treatment and exfoliation were beneficial to increase the pore volume of g-C3N4 and enhance the redox ability of g-C3N4. The degradation rate of acid treated g-C3N4 to Rhodamine B in visible light was 3.13 times that of untreated g-C3N4, and the degradation rate of acid treated g-C3N4 to ciprofloxacin was 5.04 times that of untreated g-C3N4, further indicating that acid treated-oxidation-exfoliated treatment can improve the photocatalytic degradation effect of g-C3N4 and expand the application range of g-C3N4. The layered g-C3N4 with different surface charges can be selectively loaded onto the semiconductor materials with exposed active crystal surfaces, providing conditions for controllable preparation of Z-type heterojunction with enhanced redox ability.

Key words

Photocatalysis/g-C3N4/degradation/redox ability

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出版年

2022
Journal of Alloys and Compounds

Journal of Alloys and Compounds

EISCI
ISSN:0925-8388
被引量20
参考文献量42
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