A hierarchical SiPN/CN/MoSx photocathode with low internal resistance and strong light-absorption for solar hydrogen production
Shi, Gang 1Zhang, Shenfeng 1Zhao, Hui 1Li, Xin 1Li, Ying 1Jin, Yuebo 1Liu, Xuefeng 1Wong, Po Keung2
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作者信息
1. Jiangnan Univ, Sch Chem & Mat Engn, Minist Educ, Key Lab Synthet & Biotechnol Colloids, 1800 Lihu Ave, Wuxi 214122, Jiangsu, Peoples R China
2. Chinese Univ Hong Kong, Sch Life Sci, Shatin, Hong Kong, Peoples R China
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Abstract
The Si/MoSx photocathode is usually fabricated by electrochemical deposition, which high interfacial resistance is usually solved by building a buried junction or inserting a metal layer between Si and MoSx. Both methods, however, involve toxic gas sources or harsh conditions of high pressure. Here, a green and mild route has been designed to insert the N-doped carbon (CN) layer between Si and MoSx by in situ polymerization and postannealing, which improves the transfer of interfacial carriers and avoids unnecessary absorption of incident light by itself. Meanwhile, combining two-step wet etching and photo-assisted electro-deposition, the Si-PN/CN/MoSx photocathode with antireflective structure was obtained.
NSTL
Elsevier