Applied Catalysis2022,Vol.30414.DOI:10.1016/j.apcatb.2021.120964

Visible-light-induced oxidative alkene difunctionalization to access alpha-sulfonyloxy ketones catalyzed by oxygen-vacancy-rich Nb2O5

Li, Yafei Yang, Yong Song, Tao Wang, Chun Zhang, Yinpan Shi, Xiaoling
Applied Catalysis2022,Vol.30414.DOI:10.1016/j.apcatb.2021.120964

Visible-light-induced oxidative alkene difunctionalization to access alpha-sulfonyloxy ketones catalyzed by oxygen-vacancy-rich Nb2O5

Li, Yafei 1Yang, Yong 2Song, Tao 2Wang, Chun 1Zhang, Yinpan 2Shi, Xiaoling2
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作者信息

  • 1. Nanjing Normal Univ
  • 2. Chinese Acad Sci
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Abstract

Herein, we report an oxygen vacancy (OVs)-rich Nb2O5 semiconductor (OVs-N-Nb2O5) as a bifunctional heterogeneous photocatalyst for unprecedent synthesis of a-sulfonyloxy ketones via oxidative alkene difunctionalization with sodium sulfinate under visible light irradiation and ambient conditions. A broad set of aromatic and aliphatic alkenes was efficiently difunctionalized into diverse a-sulfonyloxy ketones in high yields with a good functional group tolerance. The catalyst OVs-N-Nb2O5 is highly stable and could be easily recovered for at least 6 successive recycles with maintaining photoactivity and selectivity. Experimental and theoretical investigations reveal that the presence of OVs not only accelerates the separation and transfer of photogenerated electron-hole pairs, but also promotes O-2 adsorption and activation to form long-lived superoxide anion radical (O-2 center dot), which greatly boosts the reaction and modulates the reaction pathways together with the intrinsic Lewis acid sites, thereby resulting in an improved reaction activity and excellent selectivity to the desired product.

Key words

Alkene difunctionalization/Nb2O5/Photocatalysis/Oxygen vacancy engineering/alpha-sulfonyloxy ketones/TRANSFER RADICAL-ADDITION/SELECTIVE OXIDATION/PHOTOREDOX CATALYSIS/BENZYLIC ALCOHOLS/METHYLENE-BLUE/EOSIN Y/PHASE/TOSYLOXYKETONES/PHOTOCATALYSIS/SEMICONDUCTORS

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出版年

2022
Applied Catalysis

Applied Catalysis

ISSN:0926-3373
被引量10
参考文献量89
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