首页|Effective reduction and doping of graphene oxide films at near-room temperature by microwave-excited surface-wave plasma process
Effective reduction and doping of graphene oxide films at near-room temperature by microwave-excited surface-wave plasma process
扫码查看
点击上方二维码区域，可以放大扫码查看
原文链接
NSTL
Elsevier
? 2022 Elsevier B.V.The effective reduction of graphene oxide (GO) and incorporation of dopant elements on flexible soft substrates, such as plastics, polymers, papers etc. are of significant importance for energy-related devices and flexible wearable electronics. Here, we demonstrate a novel microwave-excited surface-wave plasma (MW-SWP) process to reduce insulating GO to highly conducting reduced graphene oxide (rGO) on the polyethylene terephthalate (PET) substrate as well as achieving reduction of free-standing GO paper at a near-room temperature. It is also observed that the GO coated on the both top and back surface of a PET substrate reduce simultaneously to obtain conducting rGO films. Most effective reduction was achieved using an argon-hydrogen gas mixture, whereas addition of nitrogen in the gas mixture enabled to incorporate nitrogen dopant in the rGO layers. The GO coated PET and freestanding GO films showed a sheet resistance in the range of MΩ/□, which reduced to an average value of 1.075 kΩ/□ and 134 Ω/□, respectively after the plasma treatment. Thus, the developed MW-SWP process can be significant to produce highly conducting rGO-based graphene films on a soft substrate as well as enabling fabrication of highly conducting freestanding rGO papers.
NSTL
Elsevier
