首页|Erratum: Expression of concern (Comparison of the optical properties of undoped and Ga-doped ZnO thin films deposited using RF magnetron sputtering at room temperature (2008) 281(8) (2120–2125), (S0030401807013181), (10.1016/j.optcom.2007.12.015))
Erratum: Expression of concern (Comparison of the optical properties of undoped and Ga-doped ZnO thin films deposited using RF magnetron sputtering at room temperature (2008) 281(8) (2120–2125), (S0030401807013181), (10.1016/j.optcom.2007.12.015))
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? 2021“Comparison of the optical properties of undoped and Ga-doped ZnO thin films deposited using RF magnetron sputtering at room temperature”, Do-Hyun Kim et al., Optics Communications 281 (2008) 2120–2125. The editors would like to note that concern has been raised about the mentioned article, in which material appears to have been duplicated, without attribution, from the earlier published articles listed below. Japanese Journal of Applied Physics, Vol. 47, No. 1, 2008, pp. 87–90 Applied Science and Convergence Technology, Vol. 16, No.5, 2007, pp. 359–365 Journal of the Korean Physical Society, Vol. 51, No. 6, 2007, pp. 1987–1992 The reproduction of material without appropriate attribution is considered to be a serious breach of scientific ethics.