首页|(163025)A synchrotron X-ray topography study of crystallographic defects in ScAlMgO_4 single crystals
(163025)A synchrotron X-ray topography study of crystallographic defects in ScAlMgO_4 single crystals
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NSTL
Elsevier
ScAlMgO_4 is a promising material that can be used to fabricate lattice-matched substrates for the epitaxial growth of GaN and InGaN. To improve its crystal quality, we used synchrotron X-ray topography to study the dislocations in a 50.8-mm-diameter ScAUvlgO_4 single crystal grown via the Czochralski method. Dislocation character was analyzed in terms of Burgers vectors by comparing dislocation contrasts recorded using sixg-vectors that represented the m+c, a+c, and c-type crystal planes. The central area of the substrate, which corresponded to the portion grown vertically under the seed crystal, was characterized by millimeter-sized domains bound by mixed-type dislocation arrays with both in-plane and c-axis Burgers vectors. Basal plane dislocations (BPDs) typically formed an arrow-like shape with three branches. Growth striations with alternating high- and low-dislocation-density areas were observed in the diameter-expanding area and high-dislocation-density areas were covered with tangled BPD networks. The mechanisms of dislocation generation, multiplication, and reaction are discussed based on their line directions and dislocation character.
Inorganic materialOxide materialCrystal growthDislocation and disclinationDomain structureX-ray diffraction
Yongzhao Yao、Keiichi Hirano、Hirotaka Yamaguchi
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Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya 456-8587, Japan
High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba 305-0801, Japan
Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba 305-8568, Japan
NSTL
Elsevier
