首页|Chemical vapor deposition growth of nonlayered γ-In2Se3 nanosheets on SiO2/Si substrates and its photodetector application
Chemical vapor deposition growth of nonlayered γ-In2Se3 nanosheets on SiO2/Si substrates and its photodetector application
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NSTL
Elsevier
? 2022 Elsevier B.V.Two-dimensional (2D) In2Se3 with excellent optical and electrical properties has great application potential for flexible devices, photodetectors, and phase change memories. Here, we report the successes of growing In2Se3 nanosheets on SiO2/Si substrates by chemical vapor deposition (CVD) and fabricating broadband photodetector based on In2Se3. The Raman spectroscopy and transmission electron microscopy studies indicate that our 2D In2Se3 is in γ-phase. Our 2D γ-In2Se3 photodetector shows a broadband response range from near ultraviolet (350 nm) to infrared (1000 nm). The stable broadband response provides opportunities for the application of 2D γ-In2Se3-based devices and also a reference for the preparation and application of other 2D materials.
Chemical Vapor DepositionPhotodetectorTwo-dimensional Materialsγ-In2Se3
Zhang Y.、Zhao Y.、Hou H.、Huang W.、Chen X.、Hoang L.H.、Song M.
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Hubei Key Laboratory of Optical Information and Pattern Recognition Wuhan Institute of Technology
Faculty of Physics Hanoi National University of Education
NSTL
Elsevier
