首页|Effect of pulsed methane gas flow on the incorporation of phosphorous in diamond
Effect of pulsed methane gas flow on the incorporation of phosphorous in diamond
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NSTL
Elsevier
The synthesis of n-type phosphorus-doped diamond is essential for the development of diamond-based bipolar devices. Although demonstrated 20 years ago, it remains a complex problem due to low incorporation efficiency and low maximum concentrations. Previous works showed the deleterious influence of methinophosphide for-mation in a methane/hydrogen/phosphine plasma on the growth of phosphorous doped diamond using the chemical vapor deposition method. In this work, we investigate the effect of pulsing methane during microwave plasma enhanced chemical vapor deposition to avoid the formation of HCP and to increase phosphorus incor-poration efficiency and maximum concentration in diamond.
NSTL
Elsevier
