RSC Advances2020,Vol.10Issue(32) :10.DOI:10.1039/d0ra02420a

Atomic and electronic structures of charge-doping VO2: first-principles calculations

Chen, Lanli Cui, Yuanyuan Luo, Hongjie Gao, Yanfeng
RSC Advances2020,Vol.10Issue(32) :10.DOI:10.1039/d0ra02420a

Atomic and electronic structures of charge-doping VO2: first-principles calculations

Chen, Lanli 1Cui, Yuanyuan 2Luo, Hongjie 2Gao, Yanfeng2
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作者信息

  • 1. Hubei Polytech Univ, Sch Math & Phys, Huangshi 435003, Hubei, Peoples R China
  • 2. Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China
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Abstract

The atomic and electronic structures of charge-doping VO2 are investigated by using first-principles calculations. Hole doping is more conducive to stabilizing the structure of VO2 than electron doping. The controllable phase transition temperature is coupled with changes in atomic and electronic structures. With the increase in hole density, the V-V chains and twisting angle experience a dramatic change, and the band gap (0.69-0 eV) is rapidly reduced due to orbital switching between the dx(2)-y(2) and dz(2)/d(yz) orbitals. However, as the electron density increases, the band gap (0.69-0.502 eV) narrows slightly, while the V-O bond lengths significantly increase. The current results provide up a variable way to tune the VO2 phase transition temperature through charge-doping.

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出版年

2020
RSC Advances

RSC Advances

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被引量13
参考文献量44
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