首页|Quantitative dislocation multiplication law for Ge single crystals based on discrete dislocation dynamics simulations
Quantitative dislocation multiplication law for Ge single crystals based on discrete dislocation dynamics simulations
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NSTL
Elsevier
This is the first report of a quantitative dislocation multiplication law for Ge single crystals based on discrete dislocation dynamics simulations。 The multiplication was studied as a function of dislocation density and effective shear stress in periodic boundary conditions close to melting point of Ge， utilizing a specifically developed diamond cubic dislocation mobility module in agreement with experiments in literature。 We report an average dislocation velocity law of a dislocation ensemble linearly proportional to the resolved shear stress - analogous to the single dislocation velocity law - with a reduced average dislocation mobility。 Exponential dislocation multiplication was observed with a multiplication parameter - linear proportional to the effective shear stress for various stress states and simulation volumes。 The coefficient of the dislocation multiplication law was determined to be 4。0 。10-3 [mN(-1)]。
NSTL
Elsevier
