Quantitative dislocation multiplication law for Ge single crystals based on discrete dislocation dynamics simulations
Gradwohl, Kevin-P. 1Miller, Wolfram 1Dropka, Natasha 1Sumathi, R. Radhakrishnan1
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作者信息
1. Leibniz Inst Kristallzuchtung
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Abstract
This is the first report of a quantitative dislocation multiplication law for Ge single crystals based on discrete dislocation dynamics simulations. The multiplication was studied as a function of dislocation density and effective shear stress in periodic boundary conditions close to melting point of Ge, utilizing a specifically developed diamond cubic dislocation mobility module in agreement with experiments in literature. We report an average dislocation velocity law of a dislocation ensemble linearly proportional to the resolved shear stress - analogous to the single dislocation velocity law - with a reduced average dislocation mobility. Exponential dislocation multiplication was observed with a multiplication parameter - linear proportional to the effective shear stress for various stress states and simulation volumes. The coefficient of the dislocation multiplication law was determined to be 4.0 .10-3 [mN(-1)].
NSTL
Elsevier