首页|(162801)Preparation and photoelectric properties of Bi doped ZnO nanoarrays
(162801)Preparation and photoelectric properties of Bi doped ZnO nanoarrays
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NSTL
Elsevier
ZnO has a large band gap, which affects its photoelectric catalytic performance to a certain extent. In this paper, Bi-doped ZnO nanoarray was successfully prepared by electrochemical deposition to improve the photoelectrochemical performance of ZnO as a photoanode. XRD results show the prepared Bi-doped ZnO is a typical hexagonal wurtzite crystal, and the SEM results also proved this point. The prepared Bi-doped ZnO presents a neat nano-array, and the doping of Bi also reduces the diameter of the nanorods from the original 500-350 nm. The results of XPS show that Bi is successfully doped into the ZnO nanoarrays, and it exists in the form of Bi_2O_3. Subsequently, the prepared Bi-doped ZnO was analyzed by fluorescence spectroscopy and photoelectrochemical properties, and it was found that when the doping concentration was 5%, the fluorescence intensity was the lowest, and at this time the carrier recombination rate corresponding was the lowest, the photoelectric catalytic effect was the best.
NSTL
Elsevier
