首页|Ternary Vss-V3Si-V5SiB2 eutectic formation in the V-Si-B system
Ternary Vss-V3Si-V5SiB2 eutectic formation in the V-Si-B system
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NSTL
Elsevier
The solidification behavior close to the ternary Vss-V3Si-V5SiB2 eutectic reaction in the V-Si-B system has been experimentally investigated via arc-melting. According to the microstructure investigation, which is performed by SEM observations, EDS and EBSD measurements and XRD analysis, the composition of the ternary eutectic reaction has been determined at V-9Si-6.5B (at%). Its microstructures in two different sample sections with different cooling rates were further investigated and compared with the calculated result of the developed eutectic growth theory based on the Jackson-Hunt model to reveal the competitive solidification behavior between the two-phase Vss-V5SiB2 and three-phase Vss-V3Si-V5SiB2 eutectic growth. As a result, the liquidus projection around the ternary eutectic reaction was modified and the cross section of the ternary Vss-V3Si-V5SiB2 eutectic coupled zone along the monovariant Vss-V5SiB2 and V3Si-V5SiB2 reaction lines was schematically proposed.
High-temperature alloysIntermetallicsMetallographyMicrostructureScanning electron microscopySEMX-ray diffraction
NSTL
Elsevier
