首页|Enhanced electrical properties and thermal stability of W/Cr co‐doped BIT-based high‐temperature piezoelectric ceramics
Enhanced electrical properties and thermal stability of W/Cr co‐doped BIT-based high‐temperature piezoelectric ceramics
扫码查看
点击上方二维码区域，可以放大扫码查看
原文链接
NSTL
Elsevier
? 2022 Elsevier B.V.Bi4Ti3O12 (BIT), a typical layered-structure ferroelectric with a high Curie temperature (TC), is a promising material for high-temperature sensors. Herein, W/Cr co-substitution at the B-site of BIT ceramics (BITWC100x) is carried out to investigate the phase structure, domain structure, and electrical properties. The W/Cr addition apparently reduces the concentration of oxygen vacancies, effectively improving the ferroelectric and piezoelectric properties as well as the resistivity of the BIT ceramics. The BITWC2 ceramic exhibits a high piezoelectric coefficient (d33 = 31.1 pC/N), a moderate TC (651 °C), a large remnant polarization (Pr = 12.2 μC cm?1), and a prominent direct current resistivity (5.49 ×106 Ω·cm at 500 °C). Moreover, the BITWC2 ceramic possesses a large d33 of 26.6 pC/N at an annealing temperature of 600 °C, indicating the excellent thermal stability of the piezoelectric coefficient. Overall, the BITWC100x ceramics can be used in piezoelectric devices at temperatures up to 500 °C.
NSTL
Elsevier
