首页|Tin dioxide buffer layer-assisted efficiency and stability of wide-bandgap inverted perovskite solar cells
Tin dioxide buffer layer-assisted efficiency and stability of wide-bandgap inverted perovskite solar cells
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Inverted perovskite solar cells (IPSCs) have attracted tremendous research interest in recent years due to their applications in perovskite/silicon tandem solar cells. However, further performance improvements and long-term stability issues are the main obstacles that deeply hinder the development of devices. Herein, we demonstrate a facile atomic layer deposition (ALD) processed tin dioxide (SnO2) as an additional buffer layer for efficient and stable wide-bandgap IPSCs. The additional buffer layer increases the shunt resistance and reduces the reverse current saturation density, resulting in the enhancement of efficiency from 19.23% to 21.13%. The target device with a bandgap of 1.63 eV obtains open-circuit voltage of 1.19 V, short circuit current density of 21.86 mA/cm(2), and fill factor of 81.07%. More importantly, the compact and stable SnO2 film invests the IPSCs with superhydrophobicity, thus significantly enhancing the moisture resistance. Eventually, the target device can maintain 90% of its initial efficiency after 600 h storage in ambient conditions with relative humidity of 20%-40% without encapsulation. The ALD-processed SnO2 provides a promising way to boost the efficiency and stability of IPSCs, and a great potential for perovskite-based tandem solar cells in the near future.
atomic layer depositiontin dioxideadditional buffer layerefficiency and stabilityinverted perovskite solar cellsELECTRON-TRANSPORT LAYERENCAPSULATIONPASSIVATIONINTERFACEVOLTAGE
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