首页|Effect of Ga ion doping in the ZnS passivation layer for high-efficiency quantum dot-sensitized solar cells
Effect of Ga ion doping in the ZnS passivation layer for high-efficiency quantum dot-sensitized solar cells
扫码查看
点击上方二维码区域，可以放大扫码查看
原文链接
NSTL
Elsevier
The recombination of carriers at the photoanode-electrolyte interface is one of the crucial factors hindering the improvement of the photoelectric property of quantum dot-sensitized solar cells (QDSSCs). Passivation layers such as ZnS have been often used to suppress this charge loss, but the effect still needs to be improved. In this paper, Ga3+ is introduced into the traditional ZnS passivation of QDSSCs via a successive ion layer adsorption and reaction (SILAR) approach to further improve the photovoltaic performance. The power conversion efficiency (PCE) of QDSSCs using Zn-Cu-In-Se/Ga-ZnS QDs as sensitizers reaches 8.72%, significantly higher than the 7.7% of Zn-Cu-In-Se/ZnS QDs, demonstrating that the incorporation of Ga3+ in the ZnS layer can optimize the solar absorption and effectively reduce the appearance of carrier recombination, providing a novel means for QDSSCs optimization.
PhotoanodeQuantum dots-sensitized solar cellsTransition metal sulfides
Liu S.、Li L.、Cao Y.、Fan R.、Sun P.、Yu M.、Zhang W.、Zhang Y.
展开 >
Hebei Key Lab of Optic-electronic Information and Materials College of Physics Science and Technology Institute of Life Science and Green Development Hebei University
College of Food and Biological Engineering Jimei University
NSTL
Elsevier
