首页|An S-scheme photocatalyst constructed by modifying Ni-doped Sn3O4 micro-flowers on g-C3N4 nanosheets for enhanced visible-light-driven hydrogen evolution
An S-scheme photocatalyst constructed by modifying Ni-doped Sn3O4 micro-flowers on g-C3N4 nanosheets for enhanced visible-light-driven hydrogen evolution
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Carbon nitrides (g-C3N4) is considered to be the prospective semiconductor photocatalyst for photocat-alytic H2 evolution. Nevertheless, it suffers from low charge transfer efficiency and fewer metal active sites. Thereby, Ni-Sn3O4/g-C3N4 photocatalysts were constructed by anchoring Ni-doped Sn3O4 micro-flowers on g-C3N4 via a feasible and straightforward solvothermal treatment. The prepared Ni-Sn3O4/g-C3N4 S-scheme heterojunction could improve the transfer and separation efficiency of photo-generated electron-hole pairs by facilitating the electrons transfer from Ni-Sn3O4 to g-C3N4. Moreover, the photocat-alytic H2 production performance was ameliorated due to the established internal electric field and the energy band bending in Ni-Sn3O4/g-C3N4 S-scheme heterojunction. Meanwhile, the doping Ni in Sn3O4 exposed more active sites in Ni-Sn3O4/g-C3N4 heterojunction for producing H2. As a result, Ni-Sn3O4/g-C3N4-5 photocatalyst exhibited outstanding H2 yields of 1961 pmol h~(-1) g~(-1) under visible light irradiation in comparison with pure Ni-Sn3O4 (12 umol h~(-1) g~(-1)) and bared g-C3N4 (1391 μmol h~(-1) g~(-1)). Furthermore, the S-scheme mechanism in Ni-Sn3O4/g-C3N4 heterojunction for producing H2 by oxidizing H2O was proposed. This study provides helpful guide for developing efficient g-C3N4-based photocatalytic systems.
Key Laboratory of Preparation and Application of Environmental Friendly Materials (filin Normal University), Ministry of Education, Changchun 130103, PR China
College of Chemistry and Environmental Engineering, Changchun University of Science and Technology, 130022, PR China
Key Laboratory of Preparation and Application of Environmental Friendly Materials (filin Normal University), Ministry of Education, Changchun 130103, PR China 1226-086X 2022 Published by Elsevier B.V. on behalf of The Korean Society of In
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