首页|Tunneling in a double-barrier system and its practical implications for field ionization and field emission

Tunneling in a double-barrier system and its practical implications for field ionization and field emission

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The relationship between the chemicalbond formation and tunneling phenomena in general,and the relationship between the filed ionizationof inert gases and the chemical reactivity ofmetallic surfaces in particular, are discussed interms of a double-barrier model of the fieldionization. Within the framework of this model ,resonance enhanced tunneling is used to elucidate;(i) the visibility of only those atoms which arclocated at the edges of densely populated atomiclayers (in contrast to the STM images, where nosuch effect occurs); (ii) the visibility of outermetallic clusters deposited onto an oxide layer inMOM systems it is also demonstrated that someresults of FIM and STM studies cannot heunderstood on the basis of one-dimensional models,in spite of the wide and successful use of essentiallyone-dimensional approaches in the theoretical treatment of tunneling phenomena..

Field emissionField ionizationSurface reactivity隧道效应场电离发射场

Z. Knor

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1999

Ultramicroscopy

Ultramicroscopy

ISTP
ISSN:0304-3991
年,卷(期):1999.79(1/4)