Journal of Alloys and Compounds2022,Vol.8939.DOI:10.1016/j.jallcom.2021.162292

Substrate temperature optimization of pulsed-laser-deposited and in-situ Zn-supplemented-CZTS films and their integration into photovoltaic devices

Abd-Lefdil, Mohammed El Khakani, My Ali Elhmaidi, Zakaria Oulad Saucedo, Edgardo
Journal of Alloys and Compounds2022,Vol.8939.DOI:10.1016/j.jallcom.2021.162292

Substrate temperature optimization of pulsed-laser-deposited and in-situ Zn-supplemented-CZTS films and their integration into photovoltaic devices

Abd-Lefdil, Mohammed 1El Khakani, My Ali 2Elhmaidi, Zakaria Oulad 2Saucedo, Edgardo3
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作者信息

  • 1. Mohammed V Univ Rabat
  • 2. Ctr Energie Mat & Telecommun
  • 3. Polytech Univ Catalonia UPC
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Abstract

The pulsed laser deposition (PLD) technique was used to deposit CZTS thin films onto SLG/Mo substrates via the KrF-laser ablation of a composite target consisting of Cu2ZnSnS4 pellet onto which Zn strips were purposely affixed. The effect of the substrate temperature (T-sub) of the PLD-CZTS films on their structure and properties was systematically studied over the 25-500 degrees C temperature range. The Zn content of the films was found to increase mainly when T-sub is raised from 300 to 500 degrees C. While both XRD and Raman analyses confirmed that the films consist of the kesterite-single-phase of which crystallinity improves when T-sub is increased (from RT up to 400 degrees C), the near resonant Raman (at 325 nm) revealed the presence of ZnS phase at high T-sub (> 400 degrees C). The optical energy band gap (Eg) of the PLD-CZTS films was consistently found to decrease from 1.9 to 1.4 eV when T-sub is increased from RT to 500 degrees C. Our results pointed out the T-sub = 400 degrees C as the optimal deposition temperature that meets at best the properties required for the PLD-CZTS films for PV application. The post-annealing (in presence of S and Sn vapors at 560 degrees C) of the PLD-CZTS films has improved further their crystallinity and led to the formation of some ZnS secondary phase at their surface. By appropriately integrating these post-annealed films into SLG/Mo/CZTS/CdS/ZnO/ITO photovoltaic devices, we were able to demonstrate their photoconversion ability with a PCE of 3.3 % (V-oc = 512 mV, J(sc) = 12.5 mA/cm(2) and a FF = 51.5 %). The analysis of their EQE spectrum suggests that the effective carrier collection length in the CZTS absorption layer needs to be extended further to achieve higher photoconversion efficiencies. (C) 2021 Elsevier B.V. All rights reserved.

Key words

Pulsed laser deposition/Cu2ZnSnS4/Kesterite/Raman spectroscopy/Resistivity/Photovoltaic devices/SOLAR-CELL/THIN-FILMS/ELECTRONIC-STRUCTURE/OPTICAL-PROPERTIES/CU2ZNSNS4/FABRICATION/IMPROVE/ENERGY

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出版年

2022
Journal of Alloys and Compounds

Journal of Alloys and Compounds

EISCI
ISSN:0925-8388
被引量3
参考文献量45
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