首页|Strain Enhanced Spin Readout Contrast in Silicon Carbide Membranes
Strain Enhanced Spin Readout Contrast in Silicon Carbide Membranes
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Arxiv
Quantum defects in solids have emerged as a transformative platform for
advancing quantum technologies. A key requirement for these applications is
achieving high-fidelity single-spin readout, particularly at room temperature
for quantum biosensing. Here, we demonstrate through ab initio simulations of a
primary quantum defect in 4H silicon carbide that strain is an effective
control parameter for significantly enhancing readout contrast. We validate
this principle experimentally by inducing local strain in silicon
carbide-on-insulator membranes, achieving a readout contrast exceeding 60%
while preserving the favorable coherence properties of single spins. Our
findings establish strain engineering as a powerful and versatile strategy for
optimizing coherent spin-photon interfaces in solid-state quantum systems.
Arxiv
