首页|Annealing group III-V compound doped silicon-germanium alloy for improved thermo-electric conversion efficiency
Annealing group III-V compound doped silicon-germanium alloy for improved thermo-electric conversion efficiency
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NETL
The thermoelectric conversion efficiency of a GaP doped SiGe alloy is improved about 30 percent by annealing the alloy at a temperature above the melting point of the alloy, preferably stepwise from 1200 C to 1275 C in air to form large grains having a size over 50 microns and to form a GeGaP rich phase and a silicon rich phase containing SiP and SiO2 particles.
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