Babu K. Murali ChandraGoel Ekta
10页查看更多>>摘要：Abstract Various challenges arise in a continuous scaling of MOSFET like Short Channel Effects, as the channel length shrinks, current is produced in OFF-state, which also results in high leakage current and power dissipation and limits the Sub-threshold Swing (SS) upto 60mV/decade. To reduce these limitations in MOSFET, new MOS devices should be developed to continue scaling. Tunnel Field Effect transistor (TFET) is the promising device suitable to replace the conventional MOSFET. A review on Tunnel field effect transistors (TEFT) to reduce the limitations and overcome the challenges of the conventional MOSFET device are presented in this paper. Various TFET structures with different doping concentrations and materials are discussed to enhance the performance of the device. TFET is suitable for analog applications and radio frequency application because of its high ON state current, low ambipolar current, low SS and low threshold voltage.
原文链接:
NSTL
Springer Nature
Baskaran S.Shunmugathammal M.Sivamani C.Ravi S....
9页查看更多>>摘要：Abstract Ultra-wide bandgap (Eg?>?3.4?eV) channel HEMTs are attractive choice for next generation power electronics. In recent years, β-Ga2O3 based field effect transistors are demonstrating excellent device performance due to its high breakdown field (Ecr?~?8 MV/cm) and good transport properties. We report DC and RF characteristics of AlN/β-Ga2O3 HEMTs on Silicon Carbide (SiC) substrate. Compared with conventional III-nitride channel-based HEMTs, the AlN/β-Ga2O3 HEMT shows larger 2DEG (two-dimensional electron gas) density, improved drain current density, and breakdown voltage with low on-resistance. The gate field plate AlN/β-Ga2O3 HEMT with gate length (LG) of 800?nm and gate-drain (LGD) distance of 1?μm, and source-drain distance (LSD) of 2.6?μm shows ON-state current density (IDS) of 0.6 A/mm, transconductance (gm) of 288 mS/mm, blocking voltage (VBR) of 509?V, on-resistance (Ron) of 1.13?Ω.mm, current gain cut-off frequency (FT) of 27.1?GHz, power gain cut-off frequency (FMAX) of 72.3?GHz, and Johnson Figure of merit (JFoM?=?VBR× FT) of 13.793 THz.V. Moreover, the proposed HEMT exhibits very low switching delay of 3.5 pS, and switching loss of 1.9?×?10?16?J. These findings reveal that the proposed AlN/β-Ga2O3 HEMTs on SiC substrate are suitable candidates for future portable low switching loss power converters and RF applications.
原文链接:- NSTL
- Springer Nature
Hadi Hasan A.Ismail Raid A.
8页查看更多>>摘要：Abstract In this work, nanocrystalline porous silicon (PSi) was prepared by the photo-electrochemical etching (PECE) technique. A comparison study between the optoelectronic properties of double junctions Ni/PSi/c-Si and Cd/PSi/c-Si photodetectors is reported. The Ni and Cd thin films were deposited on the porous silicon layers by the thermal evaporation technique. The structural, electrical, and optoelectronic properties of Cd/PSi/n-Si and Ni/PSi/c-Si devices were examined at room temperature. The XRD analysis confirmed the formation of the nanocrystalline structure of the PSi layer. Scanning electron microscope (SEM) studies reveal the formation of circular pores with an average diameter of 250?nm. The dark and illuminated I-V characteristics of the photodetectors are investigated at room temperature, and the junction characteristics of the Cd/PSi/c-Si junction are better than those of the Ni/PSi/c-Si junction. The maximum responsivity of the Cd/PSi/c-Si photodetector is 1.47AW?1 at 400?nm, while the maximum responsivity of Ni/PSi/c-Si was about 1.45AW?1 at 540?nm. The external quantum efficiency (EQE) of Cd/PSi/c-Si and Ni/PSi/c-Si photodetectors was 450% and 330% at 400?nm, respectively.
原文链接:- NSTL
- Springer Nature
Chen ChenLi JingweiChen JianBan Boyuan...
12页查看更多>>摘要：Abstract The possibility of complete collecting eutectic Si and primary Si as purified Si during Al-Si solvent refining with Zr additions has been studied. From the ICP results, the B content in the eutectic Si is significantly higher than that in the primary Si with the low Zr addition (Zr addition?≤?330 ppmw, Bmax=233 ppmw). With the excessive Zr addition, the B element in the melt is more and more distributed in the ZrB2 phase (over 95% with 3000 ppmw Zr addition), which causes the B content of primary Si and eutectic Si remained low level. Through the consistency of the estimated XZrB2 in this work with the theoretical value, the mechanism of the high-efficiency B removal is clearly revealed. The EDS analysis shows that the ZrSi2 phase is trapped and mixed in the collected Si crystal, which caused the Zr content in the Si crystal increasing abnormally, and the subsequent HCl?+?HF leaching process can effectively eliminate the trapped and mixed ZrSi2 phase in the Si phase. After leaching treatment, the B and Zr contents of eutectic Si and primary Si can reach the same level. This suggests that all Si crystals in Al-Si alloy can be used as purified Si, which greatly increases the recovery ratio of Si.
原文链接:- NSTL
- Springer Nature
Suguna M.Charumathi V.Balamurugan N. B.Hemalatha M....
11页查看更多>>摘要：Abstract The ever-increasing growth of semiconductor industries owing to nano sizing of modern electronic devices intensifies the need to handle enormous data. It is necessary to rely on the process of creating algorithms that extract useful information from data, automatically. The majority of data found in the real world are conflicting in nature and must be optimized to attain the demanded target. In the proposed work a Machine Learning (ML) based framework is developed for constructing the best Tunnel FETs on replacing the computationally intensive TCAD simulations. To optimize the design parameters and objectives, a Multi-Objective Optimization (MOO) technique based on Machine Learning and a natural selection approach of non-dominated sorting genetic algorithm-II (NSGA-II) is presented. TFETs optimum design together with the tradeoff between Natural Length, and Vertical Electric Field are automatically identified. The acquired results are compared to TCAD results for demonstrating the ML wrapped TFETs design in the MOO framework is advanced and applied to forecast optimal solutions for the design of TFETs.
原文链接:- NSTL
- Springer Nature
Anthoniraj S.Saravanan K.Vinay Raj A. S.Vignesh N. A....
9页查看更多>>摘要：Abstract Tunneling field effect transistors (TFETs) have been proposed as switches for low-power integrated circuits. A negative-capacitance vertical-tunnel FET that improves vertical tunnelling over corner tunnelling. This is due to the fact that when there is negative capacitance, a stronger vertical electric field is formed. The device can be altered to operate in the TFET or MOSFET modes and tweaked to act as an n-type or p-type FET by changing the electrostatic doping utilising multiple gates. Tunnel FET is a device that has a lot of potential for replacing MOSFETs and their shortcomings (TFET). Applying the appropriate gate bias turns ON this simple gated P I N diode. Because of the Band To Band Tunneling (BTBT) concept underpinning these Tunneling FETs, a current can flow from the p-valence region’s band to the intrinsic area’s conduction band. Low-power applications can benefit from this design because of the reduced OFF-state leakage current (IOFF). As a result, the proposed study makes use of a novel vertically stacked TFET structure that combines the benefits of uniformly doped junctionless transistors with the tunnelling effect. A 2D TCAD simulation programme is used to simulate and confirm the analytical model findings. As a result of the findings, the device’s surface potential, electric field, and threshold voltage have all been greatly improved.
原文链接:- NSTL
- Springer Nature
Hashmi Abdul WahabMehdi HusainMabuwa SipokaziMsomi Velaphi...
15页查看更多>>摘要：Abstract The welding process is used to join similar or dissimilar alloys, resulting in severe joint softening, uneven grain structure, and inevitable deficiencies. The friction stir process (FSP) can reduce the grain size and enhance the tensile properties. In this work, the FSP was applied to Si-rich TIG welded joints to enhance the tensile properties and microstructure of the TIG-welded joints by variation of rotational tool speed (TRS), and it was observed that the TIG welding defects (solidification defects, micro-voids, porosity, coarse grain structure) were removed, and the grain size of the TIG weldment was decreased. The coarse eutectic Al13Fe4 and Mg2Si phases were transformed into very small phases in the TIG?+?FSPed joints. The homogenization of the primary α-Al exists in the TIG welded joints was continuously enhanced as the TRS increased. The processed zone with high TRS (1100?rpm) demonstrated higher tensile strength (102.76?MPa), whereas the TIG weldment using filler ER4043 was employed to have an average tensile strength of 72.14?MPa. The ultrafine grain structure of 5.14?μm was found in the TIG?+?FSPed weldment with a TRS of 1100?rpm, while the coarse grain size of 20.85?μm was found in the TIG weldment.
原文链接:- NSTL
- Springer Nature
