首页|Evolution of Tunnel Field Effect Transistor for Low Power and High Speed Applications: A Review
Evolution of Tunnel Field Effect Transistor for Low Power and High Speed Applications: A Review
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NSTL
Springer Nature
Abstract Various challenges arise in a continuous scaling of MOSFET like Short Channel Effects, as the channel length shrinks, current is produced in OFF-state, which also results in high leakage current and power dissipation and limits the Sub-threshold Swing (SS) upto 60mV/decade. To reduce these limitations in MOSFET, new MOS devices should be developed to continue scaling. Tunnel Field Effect transistor (TFET) is the promising device suitable to replace the conventional MOSFET. A review on Tunnel field effect transistors (TEFT) to reduce the limitations and overcome the challenges of the conventional MOSFET device are presented in this paper. Various TFET structures with different doping concentrations and materials are discussed to enhance the performance of the device. TFET is suitable for analog applications and radio frequency application because of its high ON state current, low ambipolar current, low SS and low threshold voltage.
ScalingMOSFETShort Channel EffectsTFETSubthreshold SwingAmbipolar current
NSTL
Springer Nature
