查看更多>>摘要:Gadolinium and manganese-doped zinc tungstate (ZnWO_4: Gd & ZnWO_4: Mn (1 at%)) nanocrystals were successfully prepared using a simple co-precipitation method. The structural, morphological, and chemical properties of the materials were thoroughly investigated using X-ray diffraction (XRD), scanning/transmission electron microscopy (SEM/TEM), and energy dispersive X-ray (EDX) analysis. The crystallite sizes of the Gd-doped and Mn-doped samples were 46 nm and 59 nm, respectively. XRD analysis confirmed that both samples exhibited a single monoclinic phase crystal structure. The Gd-doping resulted in a more uniform particle size distribution and smoother surface morphology, which could enhance the optical and magnetic properties of the material. In contrast, Mn-doping led to the formation of more agglomerated particles with a rougher texture, potentially affecting the specific surface area and its interaction with external fields. SEM/ TEM images also revealed an increase in average particle size with the Mn dopant. Optical properties, as measured by diffuse reflectance spectroscopy (DRS), showed a band gap of 3.79 eV for ZnWO_4: Gd and 3.40 eV for ZnWO4: Mn. Magnetic measurements indicated enhanced magnetic properties for ZnW04i Mn compared to both pure ZnW04 and ZnWO_4: Gd. The dielectric properties, including the dielectric constant (εr), dielectric loss (tan δ), and AC conductivity, were studied over a frequency range from 100 Hz to 3 MHz at room temperature. The reduced coercivity observed in the Mn-doped sample suggests improved performance for potential applications in transformers, windings, and magnetic storage devices, where reduced core loss and enhanced efficiency are key requirements.This study not only enhances the understanding of the influence of Gd and Mn doping on ZnWO_4 properties but also opens up new possibilities for the development of multifunctional materials for advanced technological applications.
查看更多>>摘要:Gadolinium and manganese-doped zinc tungstate (ZnWO_4: Gd & ZnWO_4: Mn (1 at%)) nanocrystals were successfully prepared using a simple co-precipitation method. The structural, morphological, and chemical properties of the materials were thoroughly investigated using X-ray diffraction (XRD), scanning/transmission electron microscopy (SEM/TEM), and energy dispersive X-ray (EDX) analysis. The crystallite sizes of the Gd-doped and Mn-doped samples were 46 nm and 59 nm, respectively. XRD analysis confirmed that both samples exhibited a single monoclinic phase crystal structure. The Gd-doping resulted in a more uniform particle size distribution and smoother surface morphology, which could enhance the optical and magnetic properties of the material. In contrast, Mn-doping led to the formation of more agglomerated particles with a rougher texture, potentially affecting the specific surface area and its interaction with external fields. SEM/ TEM images also revealed an increase in average particle size with the Mn dopant. Optical properties, as measured by diffuse reflectance spectroscopy (DRS), showed a band gap of 3.79 eV for ZnWO_4: Gd and 3.40 eV for ZnWO4: Mn. Magnetic measurements indicated enhanced magnetic properties for ZnW04i Mn compared to both pure ZnW04 and ZnWO_4: Gd. The dielectric properties, including the dielectric constant (εr), dielectric loss (tan δ), and AC conductivity, were studied over a frequency range from 100 Hz to 3 MHz at room temperature. The reduced coercivity observed in the Mn-doped sample suggests improved performance for potential applications in transformers, windings, and magnetic storage devices, where reduced core loss and enhanced efficiency are key requirements.This study not only enhances the understanding of the influence of Gd and Mn doping on ZnWO_4 properties but also opens up new possibilities for the development of multifunctional materials for advanced technological applications.
查看更多>>摘要:In this work, the laser-induced thermoelectric voltage (LITV) of the solution-deposited inclined Bi_2Sr_2Cuo_y (BSCO) thin films with different wavelength semiconductor lasers was investigated. Microstructure results indicate the BSCO thin film inclined growth along the substrate with the same angle. Obvious LITV keeps a linear increase with the increased power density for each wavelength laser. The peak voltage is over 40 mV at the power density of 40 mW/cm~2. It is slightly different with the laser wavelength, caused by the difference in optical absorption and light penetration depth. The sensitivity is higher than 0.8 and increases to 1.15 V·cm~2/W with the laser changes from green to ultraviolet. Furthermore, based on the LITV effect of the BSCO thin film, the carry information can be transmitted and decoded correctly via the optical communications system composed of the light diode laser. All these results demonstrate the potential application and favorable properties of the inclined BSCO thin films in broad-spectrum response of photodetection.
查看更多>>摘要:In this work, the laser-induced thermoelectric voltage (LITV) of the solution-deposited inclined Bi_2Sr_2Cuo_y (BSCO) thin films with different wavelength semiconductor lasers was investigated. Microstructure results indicate the BSCO thin film inclined growth along the substrate with the same angle. Obvious LITV keeps a linear increase with the increased power density for each wavelength laser. The peak voltage is over 40 mV at the power density of 40 mW/cm~2. It is slightly different with the laser wavelength, caused by the difference in optical absorption and light penetration depth. The sensitivity is higher than 0.8 and increases to 1.15 V·cm~2/W with the laser changes from green to ultraviolet. Furthermore, based on the LITV effect of the BSCO thin film, the carry information can be transmitted and decoded correctly via the optical communications system composed of the light diode laser. All these results demonstrate the potential application and favorable properties of the inclined BSCO thin films in broad-spectrum response of photodetection.
查看更多>>摘要:For RB-SiC space optical hard-brittle ceramic materials, it's easy to introduce subsurface damage defects during precision grinding. Subsurface damage (SSD) defects affect the imaging quality, stability, service life and other key technical parameters of space optical hard-brittle ceramic materials. In order to adapt optical components to deep space exploration environment and extreme environment conditions, it's necessary to further highlight the efficient, low damage and high quality to reduce the subsurface defects of optical components, so as to improve the optical performance of optical components. With oxygen (O_2) plasma torches surface modification at room temperature environment (25 ± 5℃) via plasma irradiation, the optical parameters after precision grinding process was improved and SSD was reduced. Via the oxygen plasma surface modification process, the SSD depth will be reduced with [12.6, 28.5] um. Compared with the process of plasma surface modification and without plasma surface modification, the results show that the subsurface damage (SSD) depth of the grinding zone without plasma surface modification was larger via the value reaches as [21.2, 29.8] um. In addition, the melting point of Si phase (1410℃) and SiC phase (2700℃) via the oxygen (O_2) plasma surface modification process with the SiO_2 (hardness = 7) layer with hardness less than SiC (Mohs hardness = 9.2 ~ 9.5) layer was generated. Established a hierarchical precision grinding RB-SiC ceramic the shape precision and surface quality comparison model and analysis fabrication of highly shape accuracy mechanism of subsurface damage (SSD) parameters. As the Normal Temperature Oxygen Plasma Surface Modification Precision Grinding (NT-OPSMPG) process via the oxygen plasma torch (100 ℃), the crack, fold, tiny particle defects at the Si phase and SiC phase boundary of the two phases are obviously reduced (↓).
查看更多>>摘要:For RB-SiC space optical hard-brittle ceramic materials, it's easy to introduce subsurface damage defects during precision grinding. Subsurface damage (SSD) defects affect the imaging quality, stability, service life and other key technical parameters of space optical hard-brittle ceramic materials. In order to adapt optical components to deep space exploration environment and extreme environment conditions, it's necessary to further highlight the efficient, low damage and high quality to reduce the subsurface defects of optical components, so as to improve the optical performance of optical components. With oxygen (O_2) plasma torches surface modification at room temperature environment (25 ± 5℃) via plasma irradiation, the optical parameters after precision grinding process was improved and SSD was reduced. Via the oxygen plasma surface modification process, the SSD depth will be reduced with [12.6, 28.5] um. Compared with the process of plasma surface modification and without plasma surface modification, the results show that the subsurface damage (SSD) depth of the grinding zone without plasma surface modification was larger via the value reaches as [21.2, 29.8] um. In addition, the melting point of Si phase (1410℃) and SiC phase (2700℃) via the oxygen (O_2) plasma surface modification process with the SiO_2 (hardness = 7) layer with hardness less than SiC (Mohs hardness = 9.2 ~ 9.5) layer was generated. Established a hierarchical precision grinding RB-SiC ceramic the shape precision and surface quality comparison model and analysis fabrication of highly shape accuracy mechanism of subsurface damage (SSD) parameters. As the Normal Temperature Oxygen Plasma Surface Modification Precision Grinding (NT-OPSMPG) process via the oxygen plasma torch (100 ℃), the crack, fold, tiny particle defects at the Si phase and SiC phase boundary of the two phases are obviously reduced (↓).
Nur Aisyah Mohamad DaudQin Ai WongBi Sheng OoiA. Hassan...
343.1-343.20页
查看更多>>摘要:The donor-acceptor arrangement of chalcone molecules is a crucial factor influencing their optical properties. Variations in this arrangement directly impact the molecular electronic structure, resulting in differences in electrostatic potential, dipole moment, molecular orbitals, electron density distribution, and (hyper)polarizability. These properties are closely related to the intramolecular charge transfer (ICT) pathway and its overall efficiency, making the arrangement an important aspect of the nonlinear optical behaviour. In this study, two novel fiuoro-methoxy chalcone derivatives with different push-pull systems-D-π-A-π-D in compound Ⅰ and D-π-A-π-A in compound Ⅱ-were synthesized and characterized. The linear and third-order nonlinear optical properties were examined using UV-Vis spectroscopy and Z-scan experiment. Subsequently, density functional theory (DFT) was employed to investigate the difference in charge transfer mechanism. A higher chemical reactivity of compound Ⅰ is suggested on its lower optical energy gap (E_g) and H0M0-LUMO energy gap. However, compound Ⅱ is found to demonstrate superior reverse saturable absorption (RSA) response, 35 times greater than that of compound Ⅰ, and better overall third-order optical nonlinearity. Compound Ⅱ with D-π-A-π-A configuration is found to exhibit higher molecular planarity, a stronger push-pull effect, and greater local polarity and dipole moment. The experimental third-order nonlinear optical (NLO) susceptibility (χ~(3)) is determined to be 6.01 × 10~(-8) esu for compound I and 7.84 × 10~(-8) esu for compound II, while the optical limiting threshold (F_(OL)) is determined to be 10.41 kJ cm~(-2) for compound I and 5.67 kJ cm~(-2) for compound Ⅱ.
Nur Aisyah Mohamad DaudQin Ai WongBi Sheng OoiA. Hassan...
343.1-343.20页
查看更多>>摘要:The donor-acceptor arrangement of chalcone molecules is a crucial factor influencing their optical properties. Variations in this arrangement directly impact the molecular electronic structure, resulting in differences in electrostatic potential, dipole moment, molecular orbitals, electron density distribution, and (hyper)polarizability. These properties are closely related to the intramolecular charge transfer (ICT) pathway and its overall efficiency, making the arrangement an important aspect of the nonlinear optical behaviour. In this study, two novel fiuoro-methoxy chalcone derivatives with different push-pull systems-D-π-A-π-D in compound Ⅰ and D-π-A-π-A in compound Ⅱ-were synthesized and characterized. The linear and third-order nonlinear optical properties were examined using UV-Vis spectroscopy and Z-scan experiment. Subsequently, density functional theory (DFT) was employed to investigate the difference in charge transfer mechanism. A higher chemical reactivity of compound Ⅰ is suggested on its lower optical energy gap (E_g) and H0M0-LUMO energy gap. However, compound Ⅱ is found to demonstrate superior reverse saturable absorption (RSA) response, 35 times greater than that of compound Ⅰ, and better overall third-order optical nonlinearity. Compound Ⅱ with D-π-A-π-A configuration is found to exhibit higher molecular planarity, a stronger push-pull effect, and greater local polarity and dipole moment. The experimental third-order nonlinear optical (NLO) susceptibility (χ~(3)) is determined to be 6.01 × 10~(-8) esu for compound I and 7.84 × 10~(-8) esu for compound II, while the optical limiting threshold (F_(OL)) is determined to be 10.41 kJ cm~(-2) for compound I and 5.67 kJ cm~(-2) for compound Ⅱ.
查看更多>>摘要:The utilisation of quantum dots (QDs) as promising materials for next-generation photovoltaics is a recent development. The optical properties of QDs can undergo tuning, and they enhance energy conversion efficiencies. In this study, CuLaSe_2 and Zn-doped CuLaSe_2 (ZnCuLaSe_2) QDs, specifically tailored for quantum dot-sensitized solar cells (QDSSCs). These QDs, which are environmentally friendly as they are free of toxic Cd and Pb elements, exhibit adjustable energy band gaps and improved photoluminescence quantum yields. The incorporation of Zn into CuLaSe_2 QDs led to a significant blue shift in optical properties and enhanced photovoltaic performance. The highest power conversion efficiency (PCE) achieved was 2.52% for ZnCuLaSe_2 QDs, compared to 1.94% for CuLaSe_2 QDs. This improvement is attributed to Zn doping, which enhances charge separation, suppresses surface trap states, and facilitates better electron transfer by modifying the energy band alignment. The synthesis methods have been developed in such a way that they are scalable, and are also compatible with low-cost, eco-friendly production processes; this underscores their feasibility for industrial applications. It can be concluded that the present study fulfills a vital function within the global energy research landscape by identifying two QDs that have the potential to be key components in advancing photovoltaic technology.
查看更多>>摘要:The utilisation of quantum dots (QDs) as promising materials for next-generation photovoltaics is a recent development. The optical properties of QDs can undergo tuning, and they enhance energy conversion efficiencies. In this study, CuLaSe_2 and Zn-doped CuLaSe_2 (ZnCuLaSe_2) QDs, specifically tailored for quantum dot-sensitized solar cells (QDSSCs). These QDs, which are environmentally friendly as they are free of toxic Cd and Pb elements, exhibit adjustable energy band gaps and improved photoluminescence quantum yields. The incorporation of Zn into CuLaSe_2 QDs led to a significant blue shift in optical properties and enhanced photovoltaic performance. The highest power conversion efficiency (PCE) achieved was 2.52% for ZnCuLaSe_2 QDs, compared to 1.94% for CuLaSe_2 QDs. This improvement is attributed to Zn doping, which enhances charge separation, suppresses surface trap states, and facilitates better electron transfer by modifying the energy band alignment. The synthesis methods have been developed in such a way that they are scalable, and are also compatible with low-cost, eco-friendly production processes; this underscores their feasibility for industrial applications. It can be concluded that the present study fulfills a vital function within the global energy research landscape by identifying two QDs that have the potential to be key components in advancing photovoltaic technology.