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光：科学与应用（英文版）
中国科学院长春光学精密机械与物理研究所
光：科学与应用（英文版）

中国科学院长春光学精密机械与物理研究所

双月

2095-5545

light_lsa@ciomp.ac.cn

0431-86176851

130033

吉林省长春市东南湖大路3888号 中国科学院长春光学精密机械与物理研究所

光：科学与应用（英文版）/Journal Light：Science & ApplicationsCSCDCSTPCD北大核心EISCI
查看更多>>《Light: Science & Applications》（《光：科学与应用》）是由中国科学院长春光学精密机械与物理研究所与中国光学学会共同主办，与自然出版集团（现更名为Springer Nature）合作出版的全英文开放获取（OA）国际学术期刊。该刊于2012年3月29日创刊，2013年10月先后被国际著名检索系统SCI及全球最大文摘引文数据库Scopus收录，最新影响引子14.098，连续3年位于SCI收录的光学期刊影响因子榜前3位。该刊是自然出版集团在中国出版的第一本OA物理类期刊，致力于推动全球范围内的光学研究，刊载光学领域基础、应用基础以及工程技术研究及应用方面的高水平的最新研究成果，包括小尺度光学、特种光学、光学材料及处理、光学元件制备、光学数据传输、光学测量、光学在生命科学及环境科学等领域的应用等方面的高质量、高影响力的原创性学术论文、News & Views、快报、展望和综述文章。
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    Electroluminescence from pure resonant states in hBN-based vertical tunneling junctions

    Magdalena GrzeszczykKristina VaklinovaKenji WatanabeTakashi Taniguchi...
    1557-1564页
    查看更多>>摘要：Defect centers in wide-band-gap crystals have garnered interest for their potential in applications among optoelectronic and sensor technologies.However,defects embedded in highly insulating crystals,like diamond,silicon carbide,or aluminum oxide,have been notoriously difficult to excite electrically due to their large internal resistance.To address this challenge,we realized a new paradigm of exciting defects in vertical tunneling junctions based on carbon centers in hexagonal boron nitride(hBN).The rational design of the devices via van der Waals technology enabled us to raise and control optical processes related to defect-to-band and intradefect electroluminescence.The fundamental understanding of the tunneling events was based on the transfer of the electronic wave function amplitude between resonant defect states in hBN to the metallic state in graphene,which leads to dramatic changes in the characteristics of electrons due to different band structures of constituent materials.In our devices,the decay of electrons via tunneling pathways competed with radiative recombination,resulting in an unprecedented degree of tuneability of carrier dynamics due to the significant sensitivity of the characteristic tunneling times on the thickness and structure of the barrier.This enabled us to achieve a high-efficiency electrical excitation of intradefect transitions,exceeding by several orders of magnitude the efficiency of optical excitation in the sub-band-gap regime.This work represents a significant advancement towards a universal and scalable platform for electrically driven devices utilizing defect centers in wide-band-gap crystals with properties modulated via activation of different tunneling mechanisms at a level of device engineering.
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    Anneal-free ultra-low loss silicon nitride integrated photonics

    Debapam BoseMark W.HarringtonAndrei IsichenkoKaikai Liu...
    1565-1577页
    查看更多>>摘要：Heterogeneous and monolithic integration of the versatile low-loss silicon nitride platform with low-temperature materials such as silicon electronics and photonics,Ⅲ-Ⅴ compound semiconductors,lithium niobate,organics,and glasses has been inhibited by the need for high-temperature annealing as well as the need for different process flows for thin and thick waveguides.New techniques are needed to maintain the state-of-the-art losses,nonlinear properties,and CMOS-compatible processes while enabling this next generation of 3D silicon nitride integration.We report a significant advance in silicon nitride integrated photonics,demonstrating the lowest losses to date for an anneal-free process at a maximum temperature 250 ℃,with the same deuterated silane based fabrication flow,for nitride and oxide,for an order of magnitude range in nitride thickness without requiring stress mitigation or polishing.We report record low anneal-free losses for both nitride core and oxide cladding,enabling 1.77 dB m-1 loss and 14.9 million Q for 80 nm nitride core waveguides,more than half an order magnitude lower loss than previously reported sub 300 ℃ process.For 800 nm-thick nitride,we achieve as good as 8.66 dB m-1 loss and 4.03 million Q,the highest reported Q for a low temperature processed resonator with equivalent device area,with a median of loss and Q of 13.9 dB m-1 and 2.59 million each respectively.We demonstrate laser stabilization with over 4 orders of magnitude frequency noise reduction using a thin nitride reference cavity,and using a thick nitride micro-resonator we demonstrate OPO,over two octave supercontinuum generation,and four-wave mixing and parametric gain with the lowest reported optical parametric oscillation threshold per unit resonator length.These results represent a significant step towards a uniform ultra-low loss silicon nitride homogeneous and heterogeneous platform for both thin and thick waveguides capable of linear and nonlinear photonic circuits and integration with low-temperature materials and processes.
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    A decomposition of light's spin angular momentum density

    Alex J.VernonSebastian GolatClaire RigouzzoEugene A.Lim...
    1578-1589页
    查看更多>>摘要：Light carries intrinsic spin angular momentum(SAM)when the electric or magnetic field vector rotates over time.A familiar vector equation calculates the direction of light's SAM density using the right-hand rule with reference to the electric and magnetic polarisation ellipses.Using Maxwell's equations,this vector equation can be decomposed into a sum of two distinct terms,akin to the well-known Poynting vector decomposition into orbital and spin currents.We present the first general study of this spin decomposition,showing that the two terms,which we call canonical and Poynting spin,are chiral analogies to the canonical and spin momenta of light in its interaction with matter.Like canonical momentum,canonical spin is directly measurable.Both canonical and Poynting spin incorporate spatial variation of the electric and magnetic fields and are influenced by optical vortices.The decomposition allows us to show that a linearly polarised vortex beam,which has no total SAM,can nevertheless exert longitudinal chiral pressure due to equal and opposite canonical and Poynting spins.
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    Electrical stimulation for brighter persistent luminescence

    Xilin MaYuhua WangTakatoshi Seto
    1590-1601页
    查看更多>>摘要：An immature understanding of the mechanisms of persistent luminescence(PersL)has hindered the development of new persistent luminescent materials(PersLMs)with increased brightness.In this regard,in-situ direct current(DC)electric field measurements were conducted on a layered structure composed of the SrAl2O4:Eu2+,Dy3+phosphor,and an electrode.In this study,the photoluminescence(PL)and afterglow properties were investigated with respect to voltage by analyzing the current signal and thermoluminescence(TL)spectroscopy.The intensity of PersL increased due to a novel phenomenon known as"external electric field stimulated enhancement of initial brightness of afterglow".This dynamic process was illustrated via the use of a rate equation approach,where the electrons trapped by the ultra-shallow trap at 0.022 eV could be transferred through the conduction band during long afterglow.The afterglow intensity could reach 0.538 cd m-2 at a 6V electric voltage.The design of an electric field stimulation technique enables the enhancement of the intensity of PersLMs and provides a new perspective for exploring the fundamental mechanics of certain established PersLMs.
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    Super-resolution diffractive neural network for all-optical direction of arrival estimation beyond diffraction limits

    Sheng GaoHang ChenYichen WangZhengyang Duan...
    1602-1614页
    查看更多>>摘要：Wireless sensing of the wave propagation direction from radio sources lays the foundation for communication,radar,navigation,etc.However,the existing signal processing paradigm for the direction of arrival estimation requires the radio frequency electronic circuit to demodulate and sample the multichannel baseband signals followed by a complicated computing process,which places the fundamental limit on its sensing speed and energy efficiency.Here,we propose the super-resolution diffractive neural networks(S-DNN)to process electromagnetic(EM)waves directly for the DOA estimation at the speed of light.The multilayer meta-structures of S-DNN generate super-oscillatory angular responses in local angular regions that can perform the all-optical DOA estimation with angular resolutions beyond the diffraction limit.The spatial-temporal multiplexing of passive and reconfigurable S-DNNs is utilized to achieve high-resolution DOA estimation over a wide field of view.The S-DNN is validated for the DOA estimation of multiple radio sources over 5 GHz frequency bandwidth with estimation latency over two to four orders of magnitude lower than the state-of-the-art commercial devices in principle.The results achieve the angular resolution over an order of magnitude,experimentally demonstrated with four times,higher than diffraction-limited resolution.We also apply S-DNN's edge computing capability,assisted by reconfigurable intelligent surfaces,for extremely low-latency integrated sensing and communication with low power consumption.Our work is a significant step towards utilizing photonic computing processors to facilitate various wireless sensing and communication tasks with advantages in both computing paradigms and performance over electronic computing.
      原文链接:
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    Entangled photons enabled ultrafast stimulated Raman spectroscopy for molecular dynamics

    Jiahao Joel FanZhe-Yu OuZhedong Zhang
    1615-1622页
    查看更多>>摘要：Quantum entanglement has emerged as a great resource for studying the interactions between molecules and radiation.We propose a new scheme of stimulated Raman scattering with entangled photons.A quantum ultrafast Raman spectroscopy is developed for condensed-phase molecules,to monitor the exciton populations and coherences.Analytic results are obtained,showing an entanglement-enabled time-frequency scale not attainable by classical light.The Raman signal presents an unprecedented selectivity of molecular correlation functions,as a result of the Hong-Ou-Mandel interference.Our work suggests a new paradigm of using an unconventional interferometer as part of spectroscopy,with the potential to unveil advanced information about complex materials.
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    Broadband and fabrication-tolerant 3-dB couplers with topological valley edge modes

    Guo-Jing TangXiao-Dong ChenLu SunChao-Heng Guo...
    1623-1630页
    查看更多>>摘要：3-dB couplers,which are commonly used in photonic integrated circuits for on-chip information processing,precision measurement,and quantum computing,face challenges in achieving robust performance due to their limited 3-dB bandwidths and sensitivity to fabrication errors.To address this,we introduce topological physics to nanophotonics,developing a framework for topological 3-dB couplers.These couplers exhibit broad working wavelength range and robustness against fabrication dimensional errors.By leveraging valley-Hall topology and mirror symmetry,the photonic-crystal-slab couplers achieve ideal 3-dB splitting characterized by a wavelength-insensitive scattering matrix.Tolerance analysis confirms the superiority on broad bandwidth of 48 nm and robust splitting against dimensional errors of 20 nm.We further propose a topological interferometer for on-chip distance measurement,which also exhibits robustness against dimensional errors.This extension of topological principles to the fields of interferometers,may open up new possibilities for constructing robust wavelength division multiplexing,temperature-drift-insensitive sensing,and optical coherence tomography applications.
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    Topologically protected entanglement switching around exceptional points

    Zan TangTian ChenXing TangXiangdong Zhang...
    1631-1644页
    查看更多>>摘要：The robust operation of quantum entanglement states is crucial for applications in quantum information,computing,and communications1-3.However,it has always been a great challenge to complete such a task because of decoherence and disorder.Here,we propose theoretically and demonstrate experimentally an effective scheme to realize robust operation of quantum entanglement states by designing quadruple degeneracy exceptional points.By encircling the exceptional points on two overlapping Riemann energy surfaces,we have realized a chiral switch for entangled states with high fidelity.Owing to the topological protection conferred by the Riemann surface structure,this switching of chirality exhibits strong robustness against perturbations in the encircling path.Furthermore,we have experimentally validated such a scheme on a quantum walk platform.Our work opens up a new way for the application of non-Hermitian physics in the field of quantum information.
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    Pulse-doubling perovskite nanowire lasers enabled by phonon-assisted multistep energy funneling

    Chunhu ZhaoJia GuoJiahua TaoJunhao Chu...
    1645-1654页
    查看更多>>摘要：Laser pulse multiplication from an optical gain medium has shown great potential in miniaturizing integrated optoelectronic devices.Perovskite multiple quantum wells(MQWs)structures have recently been recognized as an effective gain media capable of doubling laser pulses that do not rely on external optical equipment.Although the light amplifications enabled with pulse doubling are reported based on the perovskite MQWs thin films,the micro-nanolasers possessed a specific cavity for laser pulse multiplication and their corresponding intrinsic laser dynamics are still inadequate.Herein,a single-mode double-pulsed nanolaser from self-assembled perovskite MQWs nanowires is realized,exhibiting a pulse duration of 28 ps and pulse interval of 22 ps based on single femtosecond laser pulse excitation.It is established that the continuous energy building up within a certain timescale is essential for the multiple population inversion in the gain medium,which arises from the slowing carrier localization process owning to the stronger exciton-phonon coupling in the smaller-n QWs.Therefore,the double-pulsed lasing is achieved from one fast energy funnel process from the adjacent small-n QWs to gain active region and another slow process from the spatially separated ones.This report may shed new light on the intrinsic energy relaxation mechanism and boost the further development of perovskite multiple-pulse lasers.
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    Etching-free pixel definition in InGaN green micro-LEDs

    Zhiyuan LiuYi LuHaicheng CaoGlen Isaac Maciel Garcia...
    1655-1665页
    查看更多>>摘要：The traditional plasma etching process for defining micro-LED pixels could lead to significant sidewall damage.Defects near sidewall regions act as non-radiative recombination centers and paths for current leakage,significantly deteriorating device performance.In this study,we demonstrated a novel selective thermal oxidation(STO)method that allowed pixel definition without undergoing plasma damage and subsequent dielectric passivation.Thermal annealing in ambient air oxidized and reshaped the LED structure,such as p-layers and InGaN/GaN multiple quantum wells.Simultaneously,the pixel areas beneath the pre-deposited SiO2 layer were selectively and effectively protected.It was demonstrated that prolonged thermal annealing time enhanced the insulating properties of the oxide,significantly reducing LED leakage current.Furthermore,applying a thicker SiO2 protective layer minimized device resistance and boosted device efficiency effectively.Utilizing the STO method,InGaN green micro-LED arrays with 50-,30-,and 10-μm pixel sizes were manufactured and characterized.The results indicated that after 4h of air annealing and with a 3.5-μm SiO2 protective layer,the 10-μm pixel array exhibited leakage currents density 1.2×10-6A/cm2 at-10 V voltage and a peak on-wafer external quantum efficiency of～6.48％.This work suggests that the STO method could become an effective approach for future micro-LED manufacturing to mitigate adverse LED efficiency size effects due to the plasma etching and improve device efficiency.Micro-LEDs fabricated through the STO method can be applied to micro-displays,visible light communication,and optical interconnect-based memories.Almost planar pixel geometry will provide more possibilities for the monolithic integration of driving circuits with micro-LEDs.Moreover,the STO method is not limited to micro-LED fabrication and can be extended to design other Ⅲ-nitride devices,such as photodetectors,laser diodes,high-electron-mobility transistors,and Schottky barrier diodes.
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