基于介电调制的埋双源沟槽栅TFET的生物传感器

Dielectric modulated buried dual source trench gate TFET based biosensors

崔国伟 ¹许会芳 ¹高伟凡¹

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作者信息

1. 安徽科技学院电气与电子工程学院,安徽蚌埠 233000
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摘要

目的:为检测生物分子,提出一种基于介电调制的埋双源沟槽栅隧穿场效应晶体管(DM-BDSTG TFET)的生物传感器.方法:采用更容易放置生物分子的沟槽栅结构,并利用Silvaco Atlas软件对基于DM-BDSTG TFET的生物传感器性能进行评估.结果:当栅源电压为1.1 V时,漏极电流灵敏度可以达到1.13×1012.此外,亚阈值摆幅可以达到34 mV/decade.结论:基于DM-BDSTG TFET的生物传感器能够更好地提高对生物分子的检测和识别能力.

Abstract

Objective:A dielectric modulated buried dual source trench gate TFET(DM-BDSTG TFET)based biosensors was proposed for detection of biomolecules.Methods:The trench gate was employed because it was easier to accommodate biomolecules in the proposed device.The performances of DM-BDSTG TFET based biosensors were evaluated by using Silvaco Atlas simulator.Results:The results indicated that the drain current sensitivity could reach 1.13× 1012 when the gate-source voltage was 1.1 V.Moreover,the subthreshold slope could reach 34 mV/decade.Conclusion:The DM-BDSTG TFET based biosensors could better improve the detection and recognition of biomolecules.

关键词

埋双源/沟槽栅/生物传感器/灵敏度/亚阈值摆幅

Key words

Buried dual source/Trench gate/Biosensors/Sensitivity/Subthreshold slop

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基金项目

安徽省高校自然科学研究项目(2023AH051845)

安徽科技学院横向项目(880937)

安徽科技学院重点学科建设项目(XK-XJGY002)

出版年

2024

安徽科技学院学报

安徽科技学院

安徽科技学院学报

影响因子：0.434

ISSN：1673-8772

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