Design and Performance of 650 V High-Voltage Superj unction MOSFET
Power MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor)is a switch-type device con-trolled by an insulated gate.It has been widely used due to its high power capability and simple drive require-ments.In this study,a 650V high-voltage superjunction MOSFET device was designed using deep trench etching and filling techniques.The device is mainly applied in power management for applications such as electric vehicle charging stations.The goal is to optimize the on-resistance while maintaining the same device parameters.The functionality of the power MOSFET device was verified through process simulation techniques.The relationship between the trench offset distance,doping concentration,on-resistance,and breakdown voltage was investigat-ed.The results showed that the trench offset could cause charge imbalance in the superjunction region.Regardless of its polarity,as long as the trench offset occurs at the same horizontal position,the total charge in the super junction region would be different.With a constant pillar width,increasing the doping concentration resulted in a gradual decrease in both breakdown voltage and on-resistance.Furthermore,the on-resistance decreased as the doping concentration increased.This study provides valuable insights for optimizing and improving device design in the field of semiconductors.
superjunction MOSFETprocess simulationdeep trench etching and filling technologysemicon-ductor
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