X波段宽带单片驱动功率放大器
X-Band Broadband Monolithic Drive Power Amplifier
曾志 1徐全胜 2高学邦1
作者信息
- 1. 中国电子科技集团公司第十三研究所,石家庄050051
- 2. 中国国防科技信息中心,北京100142
- 折叠
摘要
基于4英寸(1英寸=2.54 cm)GaAs PHEMT工艺,设计和制作了一款X波段驱动功率放大器单片集成电路.详细介绍了微波单片集成电路(MMIC)的设计方法,并对芯片进行了测试,测试结果为:在8 ～ 12 GHz频带内,功率放大器的增益大于20 dB、1 dB压缩点输出功率大于21 dBm、输入输出驻波比小于1.6∶1,单电源8V供电,电流小于80 mA.采用具有谐波抑制作用的输出匹配电路,获得了较好的谐波抑制指标,在1 dB压缩点输出功率大于21 dBm时,全频带的二次谐波抑制比均小于-40 dBc.单片电路的最终面积为2.0 mm×1.4 mm×0.1 mm,可广泛应用于各种微波系统.
Abstract
Based on 4-inch (1 inch =2.54 cm) GaAs pseudo-morphic high electron mobility transistor (PHEMT) process,an X-band drive power amplifier microwave monolithic integrated circuit (MMIC) with good performances was designed and fabricated.The circuit design method was introduced in detail and the chips were tested.The test results show that the typical gain is more than 20 dB,the voltage standing wave ratio (VSWR) is less than 1.6∶1,and the output power is more than 21 dBm at 1 dB impression point with the operation frequency from 8 GHz to 12 GHz.The MMIC is driven by single + 8 V power supply,and DC current is less than 80 mA.With harmonic suppressive network,a good harmonic suppression is obtained.When the output power is greater than 21 dBm at 1 dB compression point,the second harmonic suppression ratio is less than-40 dBc over the work frequency.The chip size is 2.0 mm × 1.4 mm × 0.1 mm.The MMIC can be used in many different microwave systems.
关键词
砷化镓/宽带/谐波抑制/微波单片集成电路(MMIC)/赝配高电子迁移率晶体管(PHEMT)Key words
GaAs/broadband/harmonic suppression/microwave monolithic integrated circuit (MMIC)/pseudo-morphic high electron mobility transistor (PHEMT)引用本文复制引用
出版年
2013
NETL
NSTL
维普
万方数据