In the process of chemical mechanical polishing(CMP),the metal multilayer wiring of integrated circuits are often subjected to surface defects due to the corrosion by chemical reagents in the polishing solution.The compounding of two or more chemical reagents that can produce collaborative corrosion inhibition effect can obtain stronger corrosion inhibition performance than a single reagent.The mechanism of multi-reagent collaborative corrosion inhibition is introduced,and the research progress of multi-reagent collaboration at home and abroad such as the compounding collaboration of two inhibitors,surfactants and corrosion inhibitors and two surfactants in the application of CMP metal corrosion inhibition in integrated circuits is summarized,and extended to the corrosion protection fields such as carbon steel metal.Finally,the development of multi-reagent collaborative inhibition in CMP field is prospected.
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