Interface modification can regulate and control the embedded interface defects of perov-skite solar cells(PSCs).In order to improve the photoelectric conversion efficiency and stability of the PSC,the NbTaO,interface modification layer was introduced between the electron transport layer and the perovskite layer,and its effect on the photovoltaic performance of PSC with upright structure was studied.The NbTaOx modified layer was obtained by spinning the ethanol solution of ethanol-niobium and ethanol-tantalum on the surface of the dense electron transport layer of SnO2,and then slowly hydrolyzed,an-nealed and in-situ grown on the surface of SnO2 film.The influence mechanism was explored by combi-ning the fluorescence spectrum,water contact angle test and ultraviolet photoelectron spectroscopy.The test results show that the photoelectric conversion efficiency of PSC based on NbTaOx interface modifica-tion layer is increased from 19.14％to 21.51％.The NbTaOx can improve the electron transport capacity,reduce the recombination of carriers at the interface,and facilitate the deposition of perovskite layers and improve the crystal quality of perovskite films.
关键词
界面修饰/电子传输/钙钛矿太阳电池(PSC)/高效率/稳定性
Key words
interface modification/electron transport/perovskite solar cell(PSC)/high efficiency/stability
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