SiC MOS电容的电学特性和栅氧界面特性是评价和改进SiC MOS器件制造工艺的重要依据.通过依次测试SiC MOS器件的氧化物绝缘特性、界面态密度、偏压温度应力不稳定性(偏压温度应力条件下的平带电压漂移)、氧化物陷阱电荷密度和可动电荷密度的方法,对分别经过氮等离子体氧化后退火(POA)处理、氮氢混合等离子体POA处理、氮氢氧混合等离子体POA处理、氮氢氯混合等离子体POA处理的SiC MOS电容的电学特性和栅氧界面特性进行了分析.结果表明,该方法可以系统地评价SiC MOS电容电学特性和栅氧界面特性,经过氮氢氯混合等离子体POA处理的SiC MOS电容可以满足高温、大场强下长期运行的性能指标.
SiC MOS Capacitors with Different Gate-Oxide Annealing Processes and Their Interface Electrical Characteristics
The electrical characteristics and gate-oxide interface characteristics of SiC MOS capaci-tors are important criteria for evaluating and improving the manufacturing process of SiC MOS devices.The electrical characteristics and gate-oxide interface characteristics of SiC MOS capacitors treated with nitrogen plasma post-oxidation annealing(POA),nitrogen-hydrogen mixed plasma POA,nitrogen-hydrogen-oxygen mixed plasma POA and nitrogen-hydrogen-chlorine mixed plasma POA respectively were analyzed by sequentially testing the oxide insulation characteristics,interface-state density,bias tempe-rature stress instability(flat-band voltage shift under bias temperature stress),oxide trap charge density and mobile charge density of SiC MOS devices.The results show that the proposed method can systemati-cally evaluate the electrical characteristics and gate-oxide interface characteristics of SiC MOS capacitors.And the SiC MOS capacitor treated with nitrogen-hydrogen-chloride mixed plasma POA can meet the performance indicators of long-term operation at high temperature and large field strength.
SiC MOS capacitorpost-oxidation annealing(POA)flat-band voltage shiftoxide trap chargemobile charge
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